Halogenation Gapfill for Void-Free High-Aspect-Ratio Gaps
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Solution Overview
Problem
Conventional methods face challenges in void-free filling of high aspect ratio gaps in semiconductor devices with desired materials, and there is a need for efficient and cost-effective processes that minimize processing systems and time.
Innovation Solution
A multi-chamber reactor system is used to deposit, expose, and convert a material layer within a gap, utilizing halogen and converting reactants in separate chambers without air breaks, enabling seamless and void-free filling of gaps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used to fill high aspect ratio gaps, then material can be deposited on the substrate, but void-free filling with desired material properties cannot be achieved
Solution Approach 1:
The filling process is divided into multiple sequential steps performed in different chambers: (1) depositing a first material layer, (2) halogenating to form a flowable intermediate layer, (3) converting to desired material, and (4) repeating cycles. This segmentation allows each step to be optimized independently, ensuring void-free filling while maintaining desired material properties throughout the gap.
Solution Approach 2:
A flowable intermediate layer formed by halogenation serves as a mediator between the deposited material and the final desired material. This intermediate layer enables seamless transition and complete gap filling by flowing into void spaces before being converted to the final material with desired properties, eliminating voids that would otherwise remain.
2Manufacturing precision
If multiple processing systems are used to achieve void-free filling, then material properties can be improved, but processing time and system complexity increase
Solution Approach 1:
Multiple processing steps (deposition, halogenation, conversion) that would traditionally require separate processing systems are merged into a single multi-chamber reactor system. The chambers are connected in sequence, allowing continuous processing without air breaks or substrate removal, thereby achieving void-free filling while maintaining high productivity through streamlined operations.
Solution Approach 2:
The process maintains continuous useful action by eliminating air breaks between processing steps. The substrate remains in the reactor system throughout, moving sequentially through different chambers for each processing step without interruption, ensuring continuous material deposition and conversion that prevents void formation while maximizing processing efficiency.
3Ease of manufacture
If air breaks are introduced between processing steps, then chamber switching is simplified, but void formation occurs and filling quality deteriorates
Solution Approach 1:
The reactor system maintains continuous vacuum or inert atmosphere between chambers, eliminating air breaks entirely. Substrates transition seamlessly through connected chambers without exposure to air, preventing oxidation and void formation while maintaining processing simplicity through the continuous flow design of the chamber system.
4Device complexity
If conventional single-chamber processing is used, then system complexity is reduced, but the ability to perform multi-step processes without air breaks is lost
Solution Approach 1:
The reactor system is segmented into multiple specialized chambers (deposition chamber, halogenation chamber, conversion chamber) connected in sequence. Each chamber performs a specific function optimized for its purpose, enabling multi-step processing without air breaks while maintaining manageable system complexity through modular design and clear functional separation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for rapid and cost-effective void-free filling of gaps with desired material, enhancing the efficiency and effectiveness of semiconductor device manufacturing.
Implementation Method 1
exposing the material layer to a halogen reactant to thereby form a flowable layer
Implementation Method 2
exposing the flowable layer to a converting reactant to form a converted material within the gap
Implementation Method 3
the activated species can be formed using a remote plasma unit fluidly coupled to the second reaction chamber
Data Source
AI summary
A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes forming a material layer on a surface of the substrate within a first reaction chamber, exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a halogen within the gap, and optionally exposing the flowable layer to a converting reactant in a third reaction chamber to form a converted material within the gap. Exemplary methods can further include a step of heat treating the flowable layer or the converted material. Exemplary systems can perform the method.