Halogenation Gapfill for Void-Free High-Aspect-Ratio Trenches
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Solution Overview
Problem
Conventional methods face challenges in void-free filling of high aspect ratio gaps in semiconductor devices with desired materials, and there is a need for efficient and time-effective processes that minimize the use of processing systems.
Innovation Solution
A multi-chamber reactor system is used to deposit, expose, and convert a material layer within a gap, utilizing halogen and converting reactants in separate chambers without air breaks, enabling seamless and void-free filling of gaps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used to fill high aspect ratio gaps, then material can be deposited on the substrate, but void-free filling with desired material properties becomes increasingly challenging
Solution Approach 1:
The filling process is segmented into multiple distinct steps performed in separate chambers: (1) depositing material layer in first chamber, (2) exposing to halogen reactant in second chamber to form flowable layer, (3) exposing to converting reactant in third chamber to form converted material, and (4) heat-treating in fourth chamber. This segmentation allows each step to be optimized independently for void-free filling of high aspect ratio gaps.
Solution Approach 2:
A flowable intermediate layer is formed by exposing the deposited material to a halogen reactant. This flowable layer acts as an intermediary that enables subsequent conversion to the desired material while ensuring void-free filling. The halogenated intermediate layer has properties that facilitate complete gap filling before final conversion.
2Reliability
If multiple processing systems are used to fill gaps with desired material, then material properties can be achieved, but the number of processing systems and time required increases
Solution Approach 1:
Multiple processing functions are merged into a single multi-chamber reactor system. The system integrates deposition, halogenation, conversion, and heat treatment chambers in one continuous processing line, allowing all steps to be performed without air breaks. This merging maintains desired material properties while significantly improving processing efficiency and reducing overall processing time.
Solution Approach 2:
The process maintains continuous useful action by performing all steps without air breaks between chambers. The substrate moves continuously from the deposition chamber through halogenation, conversion, and heat treatment chambers in a seamless sequence. This continuity eliminates idle time and maintains process efficiency while ensuring consistent material properties.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for cost-effective, time-efficient, and void-free filling of gaps with desired materials, enhancing the filling capability by at least 1.5 times faster growth at the bottom of the gap compared to sidewalls.
Implementation Method 1
exposing the material layer to a halogen reactant to thereby form a flowable layer
Implementation Method 2
exposing the flowable layer to a converting reactant to form a converted material within the gap
Implementation Method 3
the activated species can be formed using a remote plasma unit fluidly coupled to the second reaction chamber
Data Source
AI summary
A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes forming a material layer on a surface of the substrate within a first reaction chamber, exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a halogen within the gap, and optionally exposing the flowable layer to a converting reactant in a third reaction chamber to form a converted material within the gap. Exemplary methods can further include a step of heat treating the flowable layer or the converted material. Exemplary systems can perform the method.