Composite Hard Mask Layout for Precise Dielectric Layer Etching
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Solution Overview
Problem
The complexity of manufacturing semiconductor devices leads to inefficiencies and increased costs due to the need for numerous complicated steps and operations, which can result in deficiencies in integration and yield.
Innovation Solution
A semiconductor device structure with a composite hard mask formed by multiple dielectric layers and semiconductor structures made of different materials, allowing for effective etching of undesired portions, thereby reducing manufacturing costs and processing time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If semiconductor devices are miniaturized to provide greater functionality and integration, then device functionality and integration are improved, but manufacturing complexity and processing time increase
Solution Approach 1:
The patent divides the masking structure into multiple segments: a first masking structure and a second masking structure made of different materials. This segmentation allows each layer to be optimized for specific etching processes, simplifying the overall manufacturing complexity while maintaining the required device functionality and integration capabilities
Solution Approach 2:
The patent employs composite materials by creating a multi-layer masking structure where the first masking structure comprises a first material and the second masking structure comprises a second material. This composite approach enables selective etching of different dielectric layers, reducing manufacturing complexity and processing time while supporting advanced device functionality
2Adaptability or versatility
If manufacturing operations are increased for integration of various semiconductor devices, then device integration is improved, but manufacturing cost and processing time increase
Solution Approach 1:
The patent implements preliminary action by forming the multi-layer masking structure before the etching processes. The first and second masking structures are prepared in advance with different materials, enabling subsequent selective etching of dielectric layers without requiring additional complex operations, thus reducing processing time while maintaining high device integration
Solution Approach 2:
The multi-layer masking structure serves multiple functions: it acts as a mask for etching different dielectric layers, provides structural support, and enables selective removal of materials. This multi-functionality reduces the need for separate manufacturing operations, decreasing processing time while supporting complex device integration
3Manufacturing precision
If composite hard mask with multiple materials is used for precise etching, then etching precision is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by assigning different materials to different regions of the masking structure. The first masking structure uses a first material optimized for etching certain dielectric layers, while the second masking structure uses a second material optimized for etching other layers. This localized material selection achieves high etching precision while keeping the overall structure manageable
Data Source
AI summary
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first semiconductor structure disposed over the second dielectric layer. The first semiconductor structure has a first portion and a second portion separated from each other by an opening. The semiconductor device structure further includes a second semiconductor structure disposed over the second dielectric layer and in the opening. The second semiconductor structure has a first portion and a second portion separated from each other. Moreover, the first portion of the second semiconductor structure is in direct contact with the first portion of the first semiconductor structure, and the second portion of the second semiconductor structure is in direct contact with the second portion of the first semiconductor structure.