Hard Mask Composition for Etching Resistance and Embeddability
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Solution Overview
Problem
The existing methods for forming organic hard mask layers in semiconductor manufacturing, such as spin-on-coating, face challenges with low etching resistance and embeddability, which can lead to defects during pattern transfer and processing.
Innovation Solution
A hard mask-forming composition comprising a resin with an aromatic ring and a polar group, combined with a compound containing an oxazine or fluorene ring, is used to create a hard mask layer that enhances etching resistance and embeddability, allowing for improved pattern transfer and processing in semiconductor manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If spin-on-coating is used to form organic hard mask layer, then throughput is improved and existing spin coater can be utilized, but etching resistance is reduced leading to defects during pattern transfer
Solution Approach 1:
The patent uses a composite material system consisting of an organic hard mask layer formed by spin-on-coating combined with an inorganic hard mask layer. The organic layer provides good step coverage and conformality, while the inorganic layer (such as silicon oxide or silicon nitride) provides the necessary etching resistance. This composite structure allows the process to maintain high throughput using spin-on-coating while achieving sufficient etching resistance through the inorganic component.
2Ease of manufacture
If organic hard mask material is used for spin-on-coating, then process simplicity is improved, but embeddability is reduced causing cavities between hard mask layer and substrate
Solution Approach 1:
The patent modifies the chemical composition parameters of the organic hard mask material by incorporating specific functional groups and molecular structures that enhance adhesion to the substrate. The material is designed with appropriate glass transition temperature, molecular weight, and functional group content to ensure proper embeddability while maintaining the spin-on-coating processability and simplicity.
3Reliability
If CVD method is used to form amorphous carbon hard mask layer, then etching resistance is improved, but throughput is reduced and equipment investment increases
Solution Approach 1:
The patent employs an organic hard mask material that can be deposited using spin-on-coating, a low-cost and high-throughput technique compared to CVD. The organic material is designed to provide adequate etching resistance for the specific application, eliminating the need for expensive CVD equipment and long deposition times. This approach uses a simpler, more economical material system that achieves sufficient performance without the overhead of complex equipment.
Data Source
AI summary
A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.