Hard Mask Opening Width Expansion for Memory Cell Film Uniformity
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Solution Overview
Problem
In the manufacturing of three-dimensional semiconductor memory devices, there is a challenge in achieving uniformity in the size of memory cell films due to variations in the formation of holes and insulators, which affects the functionality and storage capacity of the devices.
Innovation Solution
The solution involves expanding the opening width of a hard mask beyond the groove width to define the processing width of holes and ensure uniform formation of memory cell films, allowing for consistent size and improved storage capacity by using a specific etching process and mask configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the opening width of the hard mask is set equal to the groove width, then the mask structure is simple and easy to manufacture, but the memory cell films formed show size nonuniformity affecting device functionality
Solution Approach 1:
The hard mask is designed with different opening widths at different locations: the opening width in the groove region is larger than the groove width, while the opening width in the stacked body region matches the stacked body width. This local differentiation ensures uniform memory cell film formation in the groove area while maintaining proper alignment in the stacked body area, resolving the size nonuniformity problem without requiring complete structural redesign
Solution Approach 2:
The hard mask is formed in advance with pre-calculated opening widths that account for the groove width and stacked body width dimensions. By performing the width expansion calculation and mask formation before the memory cell film formation process, the patent ensures that the etching process will produce uniformly sized holes and subsequently uniformly sized memory cell films, preventing the nonuniformity problem before it occurs
2Manufacturing precision
If the hard mask opening width is expanded beyond groove width, then uniform memory cell films are achieved, but the mask design and manufacturing process become more complex
Solution Approach 1:
The patent changes the opening width parameter of the hard mask from being equal to the groove width to being larger than the groove width. Specifically, the opening width is set to be the groove width plus a predetermined expansion amount. This parameter change ensures that the etching process produces uniformly sized holes that lead to uniformly sized memory cell films, achieving consistent formation while the actual manufacturing complexity increase is minimal since it only requires adjusting the mask pattern dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity of memory cell films and increases storage capacity by ensuring consistent formation of holes and insulators, thereby improving the overall performance and functionality of semiconductor devices.
Implementation Method 1
a hole is formed in a part of the groove using a mask
Data Source
AI summary
A semiconductor device includes a substrate, a stacked body provided on the substrate, a first insulator dividing the stacked body in a second direction crossing the first direction, a second insulator adjacent to the first insulator and dividing the stacked body in the second direction, a first hole, and a first insulating member. In the stacked body, a plurality of layers are stacked in a first direction perpendicular to the upper surface of the substrate. The first hole penetrates the stacked body and the first insulator in the first direction. The first insulating member penetrates the stacked body and the second insulator in the first direction and is adjacent to the first hole via a first electrode in a third direction crossing the first direction and the second direction, and has an opening diameter larger than that of the first insulator.