Semiconductor Hard Mask Polymer Composition for Spin-Coated Etch Resistance
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Solution Overview
Problem
Existing hard mask materials for semiconductor applications face challenges in achieving balanced etch resistance, solubility, and storage stability, particularly when applied through spin coating, leading to increased costs and defects.
Innovation Solution
A hard mask polymer comprising specific monomeric components, such as divinylbenzene and benzene ring structures, with optional substituents, is developed, along with a composition including an organic solvent, crosslinking agent, and catalyst, suitable for spin coating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If chemical vapor deposition is used to form hard mask, then etch resistance is improved, but equipment investment cost increases and processing time increases
Solution Approach 1:
The patent changes the chemical composition parameters of the hard mask material by incorporating specific polymers with aromatic rings and crosslinkable functional groups. This allows the material to achieve high etch resistance through chemical composition optimization rather than requiring expensive CVD equipment, thereby resolving the contradiction between etch resistance and manufacturing cost
Solution Approach 2:
The patent uses composite polymer materials combining aromatic ring structures for etch resistance and crosslinkable functional groups for solubility control. This composite approach enables spin-coating processing while maintaining CVD-level etch resistance, eliminating the need for expensive CVD equipment
2Strength
If chemical vapor deposition is used to form hard mask, then etch resistance is improved, but processing time increases
Solution Approach 1:
The patent modifies the chemical parameters of the hard mask material to enable spin-coating deposition, which is significantly faster than CVD processing. The specific polymer composition with aromatic rings and crosslinkable groups allows rapid deposition while maintaining high etch resistance, thereby reducing processing time
Solution Approach 2:
The patent replaces the thermal field-based CVD process with a solution-based spin-coating process. This substitution changes the deposition mechanism from thermal vapor deposition to liquid film formation, dramatically reducing processing time while maintaining etch resistance through chemical composition design
3Ease of manufacture
If hard mask material is designed for spin coating, then ease of manufacture is improved, but etch resistance decreases
Solution Approach 1:
The patent employs composite polymer structures combining aromatic ring systems (for etch resistance) with crosslinkable functional groups (for solubility and film formation). This composite design enables spin-coating processing while achieving etch resistance comparable to CVD hard masks, resolving the contradiction between ease of manufacture and etch resistance
Solution Approach 2:
The patent implements local quality differentiation within the polymer structure: aromatic rings provide localized etch resistance while crosslinkable functional groups provide localized solubility and film-forming capability. This spatial differentiation of functions allows spin-coating ease of manufacture while maintaining high etch resistance
4Strength
If photoresist patterns are made thinner, then pattern collapse is prevented, but etch depth of etching target layers is limited
Solution Approach 1:
The patent introduces a hard mask layer as an intermediary between the thin photoresist pattern and the etching target layer. The hard mask provides the necessary structural support and etch resistance, enabling the photoresist to remain thin for pattern fidelity while the hard mask mediates the etching process to achieve the required etch depth
Solution Approach 2:
The patent segments the patterning system into distinct functional layers: a thin photoresist layer for pattern definition and a separate hard mask layer for etch resistance and depth control. This segmentation allows each layer to be optimized independently, resolving the contradiction between pattern stability and etch depth
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymer composition provides improved etch resistance and solubility, reducing costs and defects, enabling efficient patterning processes with lower defect rates compared to conventional chemical vapor deposition methods.
Implementation Method 1
achieving improved etch resistance, solubility, and mechanical properties
Implementation Method 2
achieving improved etch resistance, solubility, and mechanical properties
Data Source
AI summary
Disclosed is a hard mask polymer for semiconductor applications including a polymer of specific monomeric components, achieving improved etch resistance, solubility, and mechanical properties. The hard mask polymer is an organic polymer including a structure represented by Formula 1:wherein R1 is a hydrocarbon including one or more benzene ring structures and n is an integer from 1 to 10000. Also disclosed are a hard mask composition for semiconductor applications including the organic polymer and a patterning method using the hard mask composition.