Hard-mask layer protective coating for semiconductor etching
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Solution Overview
Problem
The existing methods for manufacturing semiconductor devices face issues with resolution degradation and residue formation due to the interaction of hard-mask materials with environmental compounds, leading to imperfections in the patterned image on dielectric layers.
Innovation Solution
A method involving the use of a protective layer to pattern and selectively remove the hard-mask layer, followed by a cleaning process to prevent residue formation and ensure precise etching, thereby reducing the impact of hard-mask interactions with environmental substances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a hard-mask layer is used to protect the dielectric layer during etching, then the resolution of the patterned image is improved, but residues form due to interaction with environmental compounds
Solution Approach 1:
A protective layer is introduced as an intermediary between the hard-mask layer and the environment. This protective layer prevents direct contact between the hard-mask material and environmental compounds, thereby eliminating the chemical interaction that causes residue formation while preserving the hard-mask's pattern protection function
Solution Approach 2:
The harmful interaction between the hard-mask and environmental compounds is extracted by removing the hard-mask from direct environmental exposure. The protective layer isolates the hard-mask, separating it from the harmful environmental compounds that would otherwise cause residue formation
2Object-generated harmful factors
If the hard-mask is exposed to environmental compounds, then residues are formed, but removing the hard-mask early prevents residue growth
Solution Approach 1:
The protective layer is applied in advance to the hard-mask layer before the hard-mask is exposed to environmental compounds. This preliminary protective action prevents residue formation at the source, eliminating the need to remove the hard-mask early as a preventive measure
3Object-generated harmful factors
If cleaning processes are applied to remove residues, then residue formation is reduced, but the process complexity increases
Solution Approach 1:
The protective layer, which might seem like an added complexity, actually simplifies the overall process by preventing the harmful residue formation in the first place. This converts the potential harm of residue formation into a benefit of easier manufacturing with fewer cleaning steps required
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the resolution and reduces residue-related issues in the semiconductor device manufacturing process, ensuring better pattern transfer and preventing further residue growth, thus improving the quality of the semiconductor device.
Implementation Method 1
A protective layer may be provided over the hard-mask layer. The protective layer may prevent interaction between compounds in an environment and the hard-mask layer
Implementation Method 2
creating regions in which the dielectric layers is bared and can be removed, for example by exposure to a suitable etching medium
Implementation Method 3
The hard-mask regions bared after patterning the photo-resist are then removed by exposure to a suitable process, such as a plasma etch
Data Source
AI summary
A method for manufacturing a semiconductor device includes providing a patterned hard-mask layer. The hard-mask layer is provided on an exposed surface of one or more layers to be patterned of a semiconductor intermediate product. The hard-mask layer covers the exposed surface in covered areas of the one or more layers to be patterned and does not cover the exposed surface in bared areas of the one or more layers to be patterned. One or more recesses are formed in the layers to be patterned by at least partially removing the layers to be patterned in the bared areas. The hard-mask layer is ten removed. After removing the hard-mask layer the recess is filled with a filling material.