In Situ Hard Mask Removal via Plasma Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing semiconductor processing methods require transferring wafers between chambers, increasing processing time, cost, and potential for contamination and errors due to the need for separate steps for hard mask opening and removal in lithographic processes.
Innovation Solution
The method involves performing all steps of hard mask etching and removal within a single dry etch chamber, eliminating the need for wafer transfer and allowing for in situ processing of semiconductor workpieces, using a plasma etch device to etch and remove the hard mask layer and intermediary layer without moving the wafer from the etch chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate chambers are used for hard mask opening and removal, then process control and cleanliness are maintained, but processing time increases and wafer transfer complexity increases
Solution Approach 1:
The patent combines multiple processing steps (hard mask opening, intermediary layer etching, and hard mask removal) into a single etch chamber. This merging eliminates the need for wafer transfer between chambers while maintaining process control through a unified processing environment, directly resolving the contradiction between process reliability and processing time
Solution Approach 2:
The etch chamber is designed to perform multiple functions: etching the hard mask layer to open regions, etching the intermediary layer, and removing the hard mask layer. This multi-functionality allows all steps to be completed in one chamber without wafer transfer, improving productivity while maintaining process control
2Object-affected harmful factors
If separate chambers are used for hard mask opening and removal, then contamination is minimized, but processing time and cost increase
Solution Approach 1:
By merging all etching and removal steps into a single chamber, the patent eliminates repeated wafer transfers that would increase contamination risk. The unified chamber environment maintains cleanliness while improving throughput by processing all steps continuously without interruption
3Ease of manufacture
If multiple wafer transfers are performed, then process steps can be separated, but processing complexity and error potential increase
Solution Approach 1:
The patent merges all necessary processing steps into a single etch chamber, eliminating the complex wafer transfer system between multiple chambers. This reduces device complexity and potential errors while maintaining process separability through sequential step execution within the same chamber
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces processing time by eliminating two instances of wafer transfer and waiting, minimizing contamination risks, and ensuring precise control over etching processes to achieve target dimensions and quality, potentially saving up to one hour of processing time per lot.
Implementation Method 1
using a plasma etch device to etch and remove the hard mask layer and intermediary layer
Data Source
AI summary
Systems and methods for in situ hard mask removal are described. In an embodiment, a method includes receiving a semiconductor workpiece comprising a substrate, an intermediary layer, a hard mask layer, and a photoresist layer in an etch chamber. The method may also include etching the hard mask layer to open a region left exposed by the photoresist layer. Additionally, such an embodiment may include etching the intermediary layer in a region left exposed by the hard mask layer. The method may also include removing the hard mask layer. In such embodiments, etching the hard mask layer, etching the intermediary layer, and removing the hard mask layer are performed in the etch chamber, and without the wafer being removed from the etch chamber.