Hard Mask Replenishment for Ion Implantation Patterning
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Solution Overview
Problem
Current ion implantation techniques for patterning media fail to adequately control the erosion of patterned masks, particularly in high areal density applications, leading to mask layer depletion and reduced effectiveness in forming precise patterns.
Innovation Solution
A method and apparatus for patterning media that involves replenishing the mask layer during or between ion implantation procedures by depositing hard mask material onto the patterned hard mask, using a high-density carbon material and controlling the deposition angle to maintain mask thickness and prevent sputtering effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If higher mass ion species are used to reduce lateral straggle and achieve higher areal densities, then patterning precision is improved, but mask erosion rate increases due to higher sputtering yield
Solution Approach 1:
The patent changes the mass of ion species used in implantation from lighter ions (e.g., nitrogen, oxygen) to heavier ions (e.g., silicon, germanium, tin). This parameter change reduces lateral straggle and improves patterning precision while accepting the trade-off of increased mask erosion, which is managed through adjusted implantation dosages and potential mask replenishment strategies
Solution Approach 2:
The patent employs dynamic adjustment of implantation parameters including ion dosage, ion energy, and potentially ion flux during the patterning process. This allows optimization of the balance between achieving sufficient pattern definition and managing mask erosion rates, with the ability to adapt to real-time mask thickness changes
2Manufacturing precision
If ion implantation dosage is increased to achieve desired pattern definition, then patterning effectiveness is improved, but mask layer depletion accelerates
Solution Approach 1:
The patent implements feedback control mechanisms where mask thickness is monitored during the ion implantation process (through ellipsometry, reflectometry, or other thickness measurement techniques), and implantation parameters are dynamically adjusted based on the measured mask thickness to prevent complete mask depletion while achieving the required pattern definition
Solution Approach 2:
The patent uses controlled excessive ion dosing where the total ion implantation dosage exceeds the minimum required for pattern definition, but this excess is managed by interspersing deposition steps that replenish the mask, effectively using partial actions in a sequence that achieves the overall goal without permanent mask loss
3Productivity
If mask thickness is reduced to accommodate higher areal densities, then areal density is improved, but mask robustness decreases leading to faster erosion
Solution Approach 1:
The patent employs ultrathin mask layers (e.g., carbon-based masks less than 10 nm thick) that are sufficient to block low-mass ions but are inherently more vulnerable to erosion by high-mass ions. These thin films are managed through careful selection of ion species, controlled implantation dosages, and potential use of protective overcoats or replenishment strategies
Solution Approach 2:
The patent uses composite mask structures combining multiple materials with complementary properties, such as carbon-based masks combined with silicon oxide or nitrogen-containing layers. These composite structures provide enhanced erosion resistance while maintaining the thin profile needed for high areal density applications, with each layer contributing different protective functions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively maintains the integrity of the mask layer, preventing undesirable ion penetration and ensuring consistent pattern formation across multiple ion implantation steps, thereby enhancing the precision and durability of patterned media production.
Implementation Method 1
the mask fails to effectively block or stop the energetic ions
Implementation Method 2
the energetic ions tend to erode or sputter-etch the mask
Implementation Method 3
depositing hard mask material onto the patterned hard mask
Implementation Method 4
implanting a portion of the ions into the exposed portions of the medium
Data Source
AI summary
According to one embodiment, a method for patterning a medium having a patterned hard mask applied thereon is disclosed herein. The patterned hard mark includes a plurality of apertures exposing portions of the medium. The method includes directing ions toward the medium, implanting a portion of the ions into the exposed portions of the medium, removing a layer of the patterned hard mask with another portion of the ions, and depositing hard mask material onto the patterned hard mask. Depositing hard mask material onto the exposed portions of the medium may follow implantation of the portion of the ions into the exposed portions of the medium.