Selective Hard Mask Formation via Catalyst Imparting and Plating
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Solution Overview
Problem
Conventional hard mask materials for semiconductor devices face limitations such as adhesivity issues, damage during heat treatment, and difficulty in removing the resist layer and substrate, limiting processing accuracy and material options.
Innovation Solution
A forming method and apparatus that selectively form a hard mask layer on a substrate with a non-plateable SiO2 portion and a plateable material portion containing OCHx, NHx, Si-based, or carbon-based materials, using catalyst imparting and electroless plating to create a hard mask layer with improved adhesion and ease of removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional hard mask materials (SiN, TiN) are used, then adhesivity to substrate and resist layer is maintained, but material selection is limited and processing accuracy is constrained
Solution Approach 1:
The invention divides the substrate into plateable and non-plateable portions, applying catalyst and hard mask layer only to plateable portions. This segmentation allows different materials to be used in different regions, enabling versatile material selection while maintaining reliable adhesivity where needed through the plateable/non-plateable distinction.
Solution Approach 2:
The invention applies different properties to different parts of the substrate by making certain portions plateable and others non-plateable. The plateable portions receive catalyst treatment and hard mask formation, while non-plateable portions remain unaffected. This local differentiation enables tailored material properties and adhesivity characteristics in specific regions.
2Manufacturing precision
If conventional hard mask materials are used, then pattern formation is achieved, but the hard mask material is damaged by heat treatment during resist layer formation
Solution Approach 1:
The invention performs preliminary actions by forming the hard mask layer before heat treatment during resist layer formation. The electroless plating process and catalyst treatment are completed in advance, creating a stable hard mask structure that can withstand subsequent heat treatment without damage, thereby maintaining both pattern accuracy and material stability.
3Strength
If conventional hard mask materials are used, then etching resistance is achieved, but the hard mask is difficult to remove after substrate dry-etching
Solution Approach 1:
The invention enables easy discarding of the hard mask after it has served its protective function during substrate dry-etching. The electroless plating hard mask layer can be selectively removed after the etching process is complete, allowing the hard mask to be discarded once its etching resistance function is fulfilled, improving ease of manufacture.
4Area of stationary object
If conventional hard mask formation method is used, then complete coverage is achieved, but the process is complex and time-consuming
Solution Approach 1:
The invention extracts the catalyst treatment and electroless plating steps from the conventional hard mask formation process, applying them only to plateable portions of the substrate. This extraction simplifies the overall process by eliminating unnecessary steps on non-plateable portions, reducing process complexity while maintaining adequate coverage where needed.
Solution Approach 2:
The invention applies partial action by forming the hard mask layer only on plateable portions rather than covering the entire substrate. This partial coverage is sufficient for the intended application, simplifying the formation process and reducing complexity while maintaining functionality in the critical areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces material limitations, simplifies the hard mask formation process, enhances processing accuracy, and allows for thicker hard mask layers, improving etching precision and ease of removal without deforming patterns or being affected by heat treatments.
Implementation Method 1
imparting a catalyst selectively to the plateable material portion by performing a catalyst imparting processing on the substrate
Implementation Method 2
forming a hard mask layer selectively on the plateable material portion by performing a plating processing on the substrate
Data Source
AI summary
A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.