Self-Aligned Hard Mask Doping for Epitaxial Semiconductor Structures
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor manufacturing methods face challenges in accurately aligning doping regions, leading to misalignment errors and suboptimal performance in semiconductor structures, particularly in high-pressure, high-temperature, and high-frequency applications.
Innovation Solution
The use of patterned hard masks as shielding layers for self-aligned doping processes, allowing precise formation of multiple doping regions through sequential implantation steps, ensuring accurate positioning and reducing misalignment errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional doping alignment methods are used, then manufacturing process is simpler, but alignment accuracy deteriorates leading to misalignment errors
Solution Approach 1:
The patent applies preliminary action by forming the first patterned hard mask before the doping process to establish precise alignment references. The hard mask is prepared in advance with specific patterns that guide the ion implantation positioning, ensuring accurate doping region placement before actual manufacturing proceeds.
Solution Approach 2:
The patterned hard mask serves as an intermediary element between the manufacturing equipment and the semiconductor substrate. It mediates the alignment process by providing physical reference structures that enable precise positioning of doping regions without requiring direct complex alignment mechanisms.
2Manufacturing precision
If multiple separate alignment steps are performed, then positioning flexibility is improved, but manufacturing time increases
Solution Approach 1:
The patent merges multiple alignment functions into a single patterned hard mask structure. The hard mask simultaneously provides alignment references for multiple doping regions and defines the doping patterns, combining what would otherwise require separate alignment steps into one integrated process.
Solution Approach 2:
The patterned hard mask performs multiple functions: it serves as an alignment reference for positioning, defines the doping region patterns, and protects underlying structures during ion implantation. This multi-functionality eliminates the need for separate alignment steps for each function.
3Manufacturing precision
If alignment tolerance is relaxed, then manufacturing complexity is reduced, but doping position accuracy deteriorates
Solution Approach 1:
The patent applies local quality by creating highly precise alignment reference features in specific locations within the hard mask pattern. These localized high-precision features provide accurate positioning cues for doping regions without requiring the entire manufacturing process to maintain high complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables precise control over doping positions, enhancing the performance of semiconductor structures by improving alignment accuracy and reducing manufacturing defects, making them suitable for high-voltage and high-frequency applications.
Implementation Method 1
performing a first implantation process using the first patterned hard mask to form a first doped region in the epitaxial layer
Data Source
AI summary
Various methods for manufacturing semiconductor structures are provided. An embodiment method includes forming a first patterned hard mask on a protective layer that is on an epitaxial layer, which includes an opening exposing a portion of the protective layer and surrounded by side surfaces of the first patterned hard mask. A first doped region and a second doped region are formed in a portion of the epitaxial layer below the opening via a first implantation and a second implantation, respectively, through the first patterned hard mask. A second patterned hard mask is formed on the side surfaces of the first patterned hard mask, through which a third doped region is formed in the portion of the epitaxial layer by performing a third implantation. The second doped region at least partially overlaps with the first doped region. The third doped region is surrounded by the second doped region.