Hardmask Composition with 2D Nanostructure for Etching
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Solution Overview
Problem
In the semiconductor industry, forming fine patterns with desirable profiles is challenging due to the limitations of typical lithographic techniques, particularly when dealing with high aspect ratios and narrow line-widths, as hardmask patterns can be damaged during etching, affecting device electrical characteristics.
Innovation Solution
A hardmask composition incorporating a two-dimensional layered nanostructure and its precursor, such as hexagonal boron nitride or metal chalcogenides, is used, which provides improved etching resistance and stability, allowing for the formation of patterns with enhanced layer stability and transparency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a photoresist layer and hardmask are used in typical lithographic technique, then a pattern can be formed, but the hardmask pattern may be damaged during etching process affecting device electrical characteristics
Solution Approach 1:
The patent uses a composite hardmask structure consisting of a first hardmask layer (silicon nitride or silicon oxide) and a second hardmask layer (amorphous carbon). This multi-layer composite provides both etching resistance and electrical characteristic preservation, with the amorphous carbon layer offering superior etching resistance while the underlying layer maintains device electrical properties.
2Reliability
If multiple layers of conductive or insulating material are stacked to form hardmask, then etching resistance is improved, but high deposition temperature modifies physical properties of material layer
Solution Approach 1:
The patent employs low-temperature deposition methods to form the amorphous carbon layer, avoiding high-temperature processes that would modify the physical properties of the underlying material layer. The amorphous carbon is deposited at temperatures that preserve the crystalline structure and electrical characteristics of the semiconductor material layer beneath.
3Manufacturing precision
If heights of photoresist layer and hardmask pattern are increased to handle high aspect ratio, then etching capability is improved, but the increase in heights is limited
Solution Approach 1:
The patent creates a composite hardmask system where a thin amorphous carbon layer is combined with a thicker silicon nitride or silicon oxide layer. This composite structure achieves the necessary etching capability for high aspect ratio patterns without requiring excessive hardmask height, as the amorphous carbon provides etching resistance while the underlying layer provides structural support.
Solution Approach 2:
The patent applies different materials with different properties to different layers of the hardmask structure. The amorphous carbon layer provides localized etching resistance at the interface with the photoresist, while the silicon nitride or silicon oxide layer provides structural support and electrical isolation, optimizing performance without increasing overall height.
Data Source
AI summary
Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.