Hardmask Composition for Nanometer Pattern Etch Resistance
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Solution Overview
Problem
The semiconductor industry faces challenges in forming fine patterns with excellent profiles due to limitations in lithographic techniques, particularly in achieving sufficient etch resistance and planarization with existing hardmask layers, especially when scaling down to nanometer sizes.
Innovation Solution
A hardmask composition including a specific compound represented by Chemical Formula 1, which incorporates aromatic hydrocarbon groups and quaternary carbon, enhancing carbon content and solubility, is used to form a hardmask layer through spin-on coating, providing excellent etch resistance and heat resistance, and is applied in a method involving heat-treatment and photoresist patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing hardmask layers are used in conventional lithographic techniques, then the pattern formation process can be completed, but the etch resistance and planarization characteristics are insufficient for ultra-fine nanometer-scale patterns
Solution Approach 1:
The patent modifies the chemical composition parameters of the hardmask layer by incorporating specific compounds with aromatic hydrocarbon groups (A1 and A2 being C6 to C30 aromatic hydrocarbon groups) and quaternary carbon structures. This changes the physical and chemical properties of the hardmask material, resulting in enhanced etch resistance and improved planarization characteristics necessary for nanometer-scale pattern formation
Solution Approach 2:
The patent creates a composite hardmask composition by combining multiple components: a compound represented by Chemical Formula 1 (containing aromatic hydrocarbon groups and quaternary carbon), a solvent, and optionally a crosslinking agent. This composite structure provides synergistic effects that simultaneously improve etch resistance, heat resistance, and planarization characteristics
2Reliability
If carbon content in hardmask composition is increased to improve etch resistance, then etch resistance improves, but solubility decreases making application difficult
Solution Approach 1:
The patent introduces specific local structural features (aromatic hydrocarbon groups A1 and A2, and quaternary carbon structures with R1 and R2 substituents) within the molecular composition. These localized structural characteristics provide high carbon content for etch resistance while the specific arrangement and choice of substituents maintain solubility in conventional solvents, enabling both high etch resistance and ease of application
3Device complexity
If photoresist layer is directly applied on material layer, then the process is simplified, but fine patterns with excellent profile cannot be achieved at nanometer scale
Solution Approach 1:
The patent introduces a hardmask layer as an intermediary between the photoresist layer and the material layer. This intermediate layer serves as a critical mediator that enables precise pattern transfer by providing superior etch resistance and planarization characteristics, allowing fine nanometer-scale patterns to be formed while maintaining a manageable multi-layer process structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask layer exhibits improved etch resistance, heat resistance, and planarization characteristics, enabling effective pattern transfer and maintaining economic efficiency by maximizing carbon content while ensuring solubility for efficient application.
Implementation Method 1
heat-treating the hardmask composition to form a hardmask layer
Implementation Method 2
enhancing carbon content and solubility
Data Source
AI summary
A hardmask composition, including a hardmask layer including a cured product of the hardmask composition, and a method of forming patterns using the hardmask layer including a cured product of the hardmask composition, the hardmask composition including a compound represented by Chemical Formula 1; and a solvent.