Hardmask Composition for Semiconductor Etch Resistance
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving effective etch resistance for ultra-fine pattern formation, as conventional hardmask layers formed through spin-coating techniques often have compromised etch resistance despite improved gap-fill and planarization characteristics, and maximizing carbon content in hardmask compositions can reduce solubility in solvents.
Innovation Solution
A hardmask composition is developed, including a compound with a structure represented by Chemical Formula 1, which incorporates aromatic and heteroaromatic rings, enhancing carbon content and etch resistance, and is applied using a solvent such as propylene glycol or cyclohexanone, along with additives like surfactants and crosslinking agents to maintain solubility and improve layer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional hardmask layers are formed through spin-coating techniques, then gap-fill and planarization characteristics are improved, but etch resistance is compromised
Solution Approach 1:
The patent changes the chemical composition parameters of the hardmask layer by using a specific composition containing a compound with formula (1) that has a carbon content of 70 wt% or more. This parameter change enables the hardmask layer to achieve both good planarization characteristics and high etch resistance simultaneously, resolving the contradiction between manufacturing precision and reliability.
Solution Approach 2:
The patent employs a composite hardmask composition that combines a specific compound (formula 1) with a solvent and optionally a crosslinking agent. This composite material approach allows the hardmask layer to exhibit both improved planarization properties and enhanced etch resistance, addressing the technical contradiction between gap-fill characteristics and etch resistance.
2Reliability
If carbon content in hardmask compositions is maximized, then etch resistance is improved, but solubility in solvents is reduced
Solution Approach 1:
The patent optimizes the carbon content parameter to 70 wt% or more while simultaneously adjusting the molecular structure parameters of the compound (formula 1) to include specific functional groups that maintain solubility. This dual parameter optimization allows the composition to achieve high etch resistance without sacrificing solubility, resolving the contradiction between reliability and ease of manufacture.
Solution Approach 2:
The patent introduces specific functional groups (such as carbonyl, carboxyl, or hydroxyl groups) at local positions within the molecule to maintain solubility, while the majority of the molecular structure provides high carbon content for etch resistance. This local quality differentiation allows simultaneous achievement of both solubility and etch resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask layer formed exhibits excellent etch resistance, capable of withstanding high-temperature processes and etching gases, while maintaining sufficient solubility and adjustability in thickness and surface roughness, thus supporting the formation of fine patterns in semiconductor manufacturing.
Implementation Method 1
maximizing a carbon content of the hardmask layer
Implementation Method 2
maintaining sufficient solubility
Implementation Method 3
crosslinking agents to maintain solubility and improve layer formation
Data Source
AI summary
A hardmask composition, a hardmask layer including a cured product of the aforementioned hardmask composition, and a method of forming patterns that includes using the hardmask layer including a cured product of the aforementioned hardmask composition, the hardmask composition including a solvent and a compound represented by Chemical Formula 1: