Hardmask Composition for Fine Pattern Etching
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Solution Overview
Problem
The semiconductor industry faces challenges in forming fine patterns with desirable profiles due to limitations in etching resistance and pattern height of hardmask materials, particularly when dealing with narrow line-widths and high aspect ratios, which can lead to deteriorated electrical characteristics and damage during the etching process.
Innovation Solution
A hardmask composition is developed, comprising a first material with an aromatic ring-containing monomer or polymer, a second material including hexagonal boron nitride, chalcogenide-based materials, and two-dimensional carbon nanostructures with controlled oxygen content, connected by chemical bonds, to enhance etching resistance and pattern transfer efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the height of photoresist layer and hardmask pattern is increased to accommodate high aspect ratio material layers, then the etching capability is improved, but the hardmask pattern becomes more susceptible to damage during etching processes
Solution Approach 1:
The patent employs a composite hardmask material consisting of multiple layers including a lower hardmask layer and an upper hardmask layer with different material compositions and properties. This composite structure allows each layer to contribute specific characteristics - the lower layer provides etching resistance while the upper layer maintains pattern integrity, thereby resolving the contradiction between etching capability and pattern reliability.
Solution Approach 2:
The hardmask is divided into multiple distinct layers (lower hardmask layer and upper hardmask layer) with different thicknesses and material compositions. This segmentation allows each layer to be optimized independently for specific functions, enabling the system to achieve both high aspect ratio etching capability and pattern integrity simultaneously.
2Reliability
If conventional hardmask materials are used to maintain chemical resistance and etching resistance, then the hardmask can tolerate various etching processes, but the etching resistance is insufficient for narrow line-width patterns
Solution Approach 1:
The patent uses a composite hardmask structure where the lower hardmask layer is formed from materials with high chemical and thermal resistance, while the upper hardmask layer contains specific compounds (such as tungsten oxide, molybdenum oxide, or tungsten nitride) that provide enhanced etching resistance for narrow line-width patterns. This composite approach allows the hardmask to simultaneously achieve conventional resistance properties and advanced etching resistance.
Solution Approach 2:
Different regions of the hardmask structure have different material compositions and properties tailored to their specific functions. The lower layer uses materials optimized for chemical and thermal resistance, while the upper layer uses materials optimized for etching resistance, allowing each region to have the local quality needed for its particular role in the patterning process.
3Ease of manufacture
If a single layer or multiple layers of conductive or insulative material are used as hardmask, then the hardmask can be formed, but high deposition temperature modifies physical properties of the material layer
Solution Approach 1:
The patent employs hardmask materials that can be deposited at lower temperatures compared to conventional methods. By changing the deposition temperature parameter, the physical properties of the underlying material layer are preserved, while still achieving the necessary hardmask functionality through the use of specially formulated composite materials that remain stable at reduced temperatures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition improves etching resistance and pattern transfer efficiency, allowing for the formation of fine patterns with improved electrical characteristics and reduced material damage during the etching process, thereby enhancing semiconductor device performance.
Implementation Method 1
the at least one of the hexagonal boron nitride, the chalcogenide-based material, and the two-dimensional carbon nanostructure connected to the polymer by a chemical bond
Data Source
AI summary
A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent.