Hardmask Composition for Semiconductor Etch Resistance
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Solution Overview
Problem
The semiconductor industry faces challenges in forming hardmask layers with excellent etch resistance, gap-fill characteristics, and planarization while maintaining solubility, as existing methods either compromise etch resistance or are economically inefficient.
Innovation Solution
A hardmask composition incorporating a polymer with structural units containing aromatic hydrocarbon rings and a solvent, which enhances carbon content for improved etch resistance and solubility, along with a flexible structure to optimize gap-fill and planarization characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a hardmask layer is formed to improve etch resistance, then etch resistance is improved, but gap-fill characteristics and planarization deteriorate
Solution Approach 1:
The patent changes the chemical composition parameters of the hardmask layer by incorporating specific polymer structures with aromatic hydrocarbon rings and hetero rings, along with controlling carbon content and functional group ratios. This allows achieving high etch resistance while maintaining good gap-fill characteristics and planarization, resolving the contradiction between etch resistance and manufacturing precision
Solution Approach 2:
The patent uses composite material composition combining polymers with specific structural units (aromatic hydrocarbon rings and hetero rings) in defined ratios. This composite approach enables the hardmask layer to simultaneously exhibit high etch resistance and excellent gap-fill characteristics, overcoming the trade-off between these properties
2Strength
If carbon content is increased to improve etch resistance, then etch resistance is improved, but solubility deteriorates
Solution Approach 1:
The patent optimizes the chemical composition parameters by introducing specific hetero rings and controlling the ratio of aromatic hydrocarbon ring units to hetero ring units. This parameter optimization allows increasing carbon content for etch resistance while maintaining solubility through the balanced molecular structure and functional group composition
Solution Approach 2:
The patent applies local quality by incorporating specific functional groups (hydroxy groups, alkoxy groups) at particular positions within the polymer structure. These localized functional groups enhance solubility without compromising the overall carbon content and etch resistance of the hardmask layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition achieves excellent gap-fill and planarization characteristics while maintaining high etch resistance and solubility, making it suitable for fine-pattern formation in semiconductor manufacturing.
Implementation Method 1
enhances carbon content for improved etch resistance
Implementation Method 2
a flexible structure to optimize gap-fill and planarization characteristics
Implementation Method 3
heat-treating the hardmask composition to form a hardmask layer
Data Source
AI summary
A hardmask composition, a hardmask layer manufactured from the hardmask composition, and a method of forming patterns from the hardmask composition, the composition includes a polymer including a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, and a solvent,