Hardmask Composition for Nanometer Lithography Etch Resistance
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Solution Overview
Problem
Current lithographic techniques face challenges in forming fine patterns with excellent profiles, especially as patterns shrink to several nanometers in size, due to limitations in etch resistance and profile quality.
Innovation Solution
A hardmask composition including a compound represented by Chemical Formula 1, which features a C6 to C30 aromatic moiety with specific substituents and a solvent, is used to form a hardmask layer that improves etch resistance through a pattern forming method involving application, heat-treatment, and photoresist patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a photoresist layer is used directly as a mask for etching material layers in ultra-fine lithography, then the lithographic process can be simplified, but the etch resistance is insufficient to maintain excellent profile quality at several nanometer pattern sizes
Solution Approach 1:
The masking function is segmented into two separate layers: a photoresist layer for pattern definition and a hardmask layer for etch resistance. This segmentation allows each layer to perform its specialized function optimally, with the photoresist providing precise patterning and the hardmask providing robust etch protection during the etching process
Solution Approach 2:
The hardmask layer acts as an intermediary between the photoresist layer and the material layer. It transfers the pattern from the photoresist to the material layer while providing the necessary etch resistance, serving as a mediator that enables the etching process to proceed with high fidelity without requiring the photoresist to directly contact the material layer
2Manufacturing precision
If the pattern size is reduced to several nanometers to achieve ultra-fine lithography, then the manufacturing precision is improved, but the etch resistance deteriorates making it difficult to maintain excellent profile quality
Solution Approach 1:
The hardmask composition uses a composite material system comprising a polycondensate of specific compounds (Formula 1 or 2) and a crosslinking agent. This composite structure provides enhanced etch resistance at ultra-fine dimensions by combining the patterning capabilities of the polycondensate with the structural reinforcement of crosslinking, enabling maintainment of excellent profile quality even at several nanometer scale
3Reliability
If a hardmask layer is introduced between the photoresist layer and material layer to improve etch resistance, then the etch resistance is enhanced, but the device complexity and process steps increase
Solution Approach 1:
The hardmask composition utilizes controlled polycondensation and crosslinking reactions to transform the physical and chemical parameters of the hardmask layer. The polycondensate provides a solid foundation with controlled molecular weight and structure, while crosslinking creates a three-dimensional network that dramatically enhances etch resistance. These parameter changes enable the hardmask to provide superior protection without requiring excessive layer thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition secures enhanced etch resistance and allows for the formation of precise patterns by providing a hard layer that withstands etching processes, ensuring high corrosion resistance and uniform film formation.
Implementation Method 1
heat-treating the resultant to form a hardmask layer
Implementation Method 2
The cured product may include a condensed polycyclic aromatic hydrocarbon
Data Source
AI summary
The present invention relates to a hardmask composition including a compound represented by Chemical Formula 1 and a solvent, a hardmask layer including a cured product of the hardmask composition, and a pattern forming method using the hardmask composition.In Chemical Formula 1, the definitions of A, R1 to R5, and n are as described in the specification.