Hardmask Composition for Fine Pattern Etch Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current lithographic techniques face challenges in forming fine patterns of several to several tens of nanometer size due to limitations in etch resistance and solubility of hardmask materials, which affect the precision and durability of semiconductor patterns.
Innovation Solution
A hardmask composition comprising a polymer with a moiety derived from a compound having an aromatic ring or heterocycle, combined with a solvent, is applied to form a hardmask layer, enhancing etch resistance and solubility through a solution process like spin coating, allowing for precise pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional hardmask materials are used, then the material can be applied and processed, but the etch resistance is insufficient for fine pattern formation
Solution Approach 1:
The patent uses a copolymer composed of a first monomer unit (providing etch resistance through aromatic/heterocyclic structures) and a second monomer unit (providing solubility through polar groups). This composite molecular structure simultaneously achieves both high etch resistance and good solubility for precise pattern formation, resolving the contradiction between material strength and manufacturing precision.
Solution Approach 2:
The patent modifies the chemical structure parameters of the hardmask material by incorporating specific functional groups (aromatic rings, heterocyclic groups for etch resistance; carbonyl, carboxyl, hydroxyl groups for solubility). By changing these molecular parameters, the material achieves both high etch resistance and adequate solubility, enabling precise fine pattern formation.
2Reliability
If hardmask material with high etch resistance is used, then pattern durability improves, but solubility decreases making pattern formation difficult
Solution Approach 1:
The copolymer combines two types of monomer units with complementary properties: the first monomer unit (with aromatic/heterocyclic structures) provides etch resistance and pattern durability, while the second monomer unit (with polar functional groups) provides solubility in aqueous solutions. This composite structure resolves the contradiction between reliability and ease of manufacture.
Solution Approach 2:
Different parts of the polymer chain have different local properties: segments derived from the first monomer provide local etch resistance, while segments derived from the second monomer provide local solubility. This local differentiation of material properties allows the overall material to achieve both high durability and good processability.
3Manufacturing precision
If fine patterns of several to several tens nanometer size are formed, then lithographic precision improves, but material limitations affect pattern quality
Solution Approach 1:
The patent employs a copolymer with dual functionality: the first monomer unit (aromatic/heterocyclic) ensures pattern durability and resistance to etching damage, while the second monomer unit (polar groups) ensures uniform coating and adequate solubility. This composite material enables high-quality fine pattern formation at several to several tens of nanometer scales by simultaneously addressing both precision and reliability requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition provides improved etch resistance and solubility, enabling the formation of fine patterns with high precision and durability, addressing the limitations of existing materials in semiconductor manufacturing.
Implementation Method 1
heat-treating the resultant to form a hardmask layer
Implementation Method 2
coating a photoresist layer thereon
Data Source
AI summary
A hardmask composition and a method of forming patterns using the hardmask composition, the composition including a polymer including a moiety derived from a compound represented by Chemical Formula 1; and a solvent: