Hardmask Composition for Semiconductor Pattern Fidelity
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Solution Overview
Problem
Current lithographic techniques face challenges in forming fine patterns with excellent profiles and achieving heat resistance and etch resistance in hardmask layers, particularly in ultra-fine semiconductor manufacturing, where gap-fill characteristics and planarization are also essential.
Innovation Solution
A hardmask composition comprising a polymer and a monomer, with the monomer present in a higher amount than the polymer, along with a solvent, which includes a surfactant, acid catalyst, or cross-linking agent, is applied using spin-on coating, and heat-treated to form a hardmask layer that provides improved heat resistance, etch resistance, and gap-fill characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a hardmask layer is formed using conventional photoresist and etching processes, then the pattern transfer is achieved, but the profile quality and heat resistance are insufficient for ultra-fine patterns
Solution Approach 1:
The patent uses a composite material system consisting of a photoresist layer and a hardmask layer formed from the composition of Formula 1. The photoresist provides pattern definition while the hardmask layer provides heat resistance and etch resistance, allowing both profile quality and reliability to be achieved simultaneously through material composition rather than single-material limitations
Solution Approach 2:
The patent changes the chemical parameters of the hardmask layer by using a specific composition with polymer chains containing aromatic groups and fluorine atoms. This chemical parameter change provides both the thermal stability needed for heat resistance and the etch selectivity needed for profile quality, resolving the contradiction between these two requirements
2Length of moving object
If the pattern size is reduced to ultra-fine dimensions, then the lithographic capability is improved, but the gap-fill characteristics and planarization become difficult to achieve
Solution Approach 1:
The patent applies local quality by having the hardmask composition selectively fill gap regions between patterns while maintaining different properties in different areas. The composition's viscosity and flow characteristics are optimized to penetrate into narrow gaps at ultra-fine dimensions while still forming a uniform, planarized layer on top surfaces, achieving both small pattern size and good gap-fill characteristics
3Reliability
If a hardmask layer is formed to provide heat resistance and etch resistance, then the pattern transfer reliability is improved, but the gap-fill characteristics and planarization are compromised
Solution Approach 1:
The patent optimizes the chemical composition parameters of the hardmask layer to achieve a balance between etch resistance and planarization. The specific polymer structure with aromatic groups provides etch resistance while the molecular weight and side chain configuration control the flow and leveling behavior during spin coating, enabling both high etch resistance and good planarization to coexist
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition significantly enhances etch resistance, heat resistance, film density, and gap-fill characteristics, enabling the formation of precise patterns with improved profile quality and pattern fidelity in semiconductor manufacturing.
Implementation Method 1
heat-treated to form a hardmask layer that provides improved heat resistance, etch resistance, and gap-fill characteristics
Implementation Method 2
applying the hardmask composition on the material layer
Data Source
AI summary
Disclosed are a polymer represented by the Chemical Formula 1, a monomer represented by the Chemical Formula 2, and a solvent, wherein the monomer is included in the same or a higher amount than the polymer, and a method of forming patterns using the same.