Hardmask Composition for Semiconductor Pattern Formation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current ultra-fine techniques for pattern formation in semiconductor manufacturing face challenges in achieving precise and reliable pattern formation due to limitations in hardmask materials, particularly in terms of heat resistance, etch resistance, and planarization characteristics, which affect the quality of the final patterned layers.
Innovation Solution
A hardmask composition comprising a solvent and a polymer with specific moieties, represented by Chemical Formulas 1, 2, and 3, is developed, which includes a moiety that provides polarity and etching performance, and is applied using a spin-on coating method followed by heat-treatment to form a hardmask layer, enabling selective etching and pattern transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional hardmask materials are used, then the pattern formation process can be completed, but the heat resistance, etch resistance, and planarization characteristics are insufficient
Solution Approach 1:
The patent employs a composite polymer structure comprising aromatic rings (for heat resistance), polar groups (for etch resistance), and aliphatic chains (for planarization). This multi-component molecular design integrates multiple functional characteristics into a single hardmask material system, resolving the contradiction between thermal stability and patterning precision.
Solution Approach 2:
The invention modifies the chemical composition parameters of the hardmask material by incorporating specific functional groups (aromatic rings, polar groups, aliphatic chains) in controlled ratios. This parameter optimization enables simultaneous achievement of high heat resistance, etch resistance, and planarization characteristics, thereby improving pattern formation precision.
2Reliability
If conventional hardmask materials are used, then the etching process can proceed, but the etch resistance is insufficient leading to poor pattern quality
Solution Approach 1:
The polymer incorporates polar functional groups (such as hydroxyl, carboxyl, or amine groups) within the aromatic ring structure, creating a composite material that exhibits enhanced etch resistance while maintaining pattern definition quality. The polar groups interact with etching chemicals to provide selective resistance.
Solution Approach 2:
The hardmask material exhibits different local properties within its molecular structure: aromatic rings provide etch resistance at the patterned regions, while the overall film composition ensures uniform etching behavior across the substrate, thereby achieving both high etch resistance and pattern quality.
3Reliability
If conventional hardmask materials are used, then the coating process can be completed, but the planarization characteristics are poor causing step differences and voids
Solution Approach 1:
The invention adjusts the molecular weight, functional group density, and chain flexibility parameters of the polymer to optimize planarization characteristics. The aliphatic chain components provide chain mobility that enables self-leveling during coating, reducing step differences and voids while maintaining pattern precision.
Solution Approach 2:
The hardmask material is designed with homogeneous distribution of functional groups throughout the polymer chain, ensuring uniform coating properties and consistent planarization behavior across the entire substrate surface, thereby eliminating step differences and voids.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition demonstrates improved chemical resistance, etch resistance, and planarization characteristics, allowing for the formation of precise patterns with minimal step differences and voids, even at low process temperatures, thus enhancing the quality of semiconductor integrated circuit devices.
Implementation Method 1
a moiety that provides polarity and etching performance
Implementation Method 2
etching performance
Implementation Method 3
heat-treating the hardmask composition to form a hardmask layer
Implementation Method 4
applying the hardmask composition according to an embodiment on the material layer
Data Source
AI summary
A hardmask composition and a method of forming patterns, the composition including a solvent; and a polymer including a moiety represented by the following Chemical Formula 1,