Hardmask Composition for Resist Underlayer Films
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Solution Overview
Problem
Current hardmask compositions for resist underlayer films in semiconductor lithographic processes face challenges such as poor etch selectivity, insufficient adhesion, and increased reflectivity, leading to substrate damage and the need for additional patterning steps, with viscosity issues during long-term storage complicating material compatibility and stability.
Innovation Solution
A polymer-based hardmask composition is developed through the reaction of specific silicon-containing compounds with a catalyst and an organic solvent, incorporating an amine base to enhance storage stability and compatibility with photoresist materials, optimizing refractive index and absorbance for improved etch selectivity and antireflective properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If an antireflective coating (ARC) material is used to minimize reflectivity, then reflectivity between imaging layer and substrate is reduced, but etch selectivity relative to the imaging layer deteriorates
Solution Approach 1:
The patent introduces a hardmask underlayer film as an intermediary layer between the ARC material and the imaging layer. This underlayer film has optimized composition (specific C/H ratio and molecular weight) that provides both good etch selectivity against the imaging layer and adequate antireflective properties, thereby mediating between the conflicting requirements of the ARC layer and the imaging layer
Solution Approach 2:
The underlayer film is formulated as a composite material with specific molecular weight range (10,000-100,000) and controlled C/H ratio, combining multiple functional properties (etch resistance, adhesion, antireflective characteristics) in a single layer, eliminating the need for separate ARC and hardmask layers
2Reliability
If a hardmask for resist underlayer film is applied as an intermediate layer, then etch resistance is improved, but process complexity increases due to additional patterning steps
Solution Approach 1:
The patent merges the functions of the ARC layer and the hardmask underlayer into a single integrated underlayer film structure. This combined layer provides both antireflective properties and hardmask functionality, eliminating the need for separate ARC deposition and hardmask formation steps, thereby reducing process complexity while maintaining etch resistance
3Object-affected harmful factors
If mask material is used to provide sufficient masking properties, then substrate damage is prevented, but adhesion to resist deteriorates
Solution Approach 1:
The patent optimizes specific parameters of the underlayer film including molecular weight (10,000-100,000) and C/H ratio to achieve the right balance between adhesion to photoresist and masking properties. By controlling these parameters, the underlayer film provides sufficient etch resistance to prevent substrate damage while maintaining good adhesion to the resist pattern
4Productivity
If acid catalysts are used during long-term storage, then polymerization reaction is accelerated, but viscosity increases due to condensation
Solution Approach 1:
The patent performs preliminary polymerization to a controlled extent before formulation, creating pre-polymers with specific molecular weights. This preliminary action allows the system to achieve desired polymerization without excessive condensation during storage, as the polymerization is already partially complete when the composition is formulated with stabilizers
5Manufacturing precision
If refractive index and absorbance are optimized for antireflective properties, then lithographic process margin is improved, but etch selectivity deteriorates
Solution Approach 1:
The underlayer film is formulated as a composite material with specific molecular weight range and controlled C/H ratio, combining multiple functional properties (etch resistance, adhesion, antireflective characteristics) in a single layer, eliminating the need for separate ARC and hardmask layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides superior long-term storage properties, high etch selectivity, and reduced reflectivity, ensuring effective pattern transfer and minimizing substrate damage, while maintaining compatibility with photoresist materials and improving lithographic process outcomes.
Implementation Method 1
a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 in the presence of a catalyst
Implementation Method 2
incorporating an amine base to enhance storage stability
Implementation Method 3
the refractive index and absorbance of the mask for processing an underlayer film should be optimized to effectively utilize antireflective properties
Data Source
AI summary
Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1with a compound of Formula 2(R)m—Si—(OCH3)4-m (2)in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent.Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.