Hardmask Composition with Condensed Ring Structure for Etch Resistance
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Solution Overview
Problem
The semiconductor industry faces challenges in forming fine patterns with sufficient etch resistance and heat resistance due to the limitations of existing hardmask layers, which often have low economic efficiency and reduced etch resistance when formed using spin-coating techniques.
Innovation Solution
A hardmask composition is developed, including a compound with a condensed ring structure of two or more benzene rings, which provides high etch resistance and heat resistance, and is formulated to maintain solubility in solvents, allowing for the formation of a dense and robust hardmask layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If existing hardmask layers are formed using spin-coating techniques, then manufacturing process is simple, but etch resistance and heat resistance are insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the hardmask material by incorporating specific compounds with condensed ring structures (two or more benzene rings) and controlling the content of aromatic hydrocarbon groups (X1 to X4) at 10-50 wt% of the total hardmask material. This compositional parameter change enables the hardmask layer to achieve sufficient etch resistance and heat resistance while maintaining spin-coating applicability.
Solution Approach 2:
The patent creates a composite hardmask material system consisting of multiple components: compounds with condensed ring structures, aromatic hydrocarbon groups (X1 to X4), and other hardmask materials. This composite approach combines the high resistance properties of aromatic compounds with the processability of spin-coating materials, achieving both improved etch/heat resistance and manufacturing simplicity.
2Strength
If hardmask layers are formed with higher density for better etch resistance, then etch resistance improves, but solubility in solvents decreases
Solution Approach 1:
The patent optimizes the molecular structure parameters of the hardmask compounds by controlling the content and type of aromatic hydrocarbon groups (X1 to X4) within specific ranges (10-50 wt%). This parameter control balances the density needed for etch resistance with the solubility required for spin-coating processing, preventing premature precipitation while ensuring adequate resistance performance.
Solution Approach 2:
The patent introduces specific functional groups (X1 to X4) at localized positions within the molecular structure that provide both density for etch resistance and solvent interaction capability. These localized aromatic hydrocarbon groups are strategically positioned to enhance etch resistance without compromising overall solubility of the hardmask composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition enables the formation of hardmask layers with excellent etch resistance, mechanical characteristics, and chemical resistance, facilitating the creation of fine patterns on material layers during the etching process.
Implementation Method 1
heat-treating the hardmask composition to form a hardmask layer
Data Source
AI summary
A hardmask composition, a hardmask layer including a cured product of the hardmask composition, and a method of forming patterns from the hardmask composition, the hardmask composition includes a compound represented by Chemical Formula 1, and a solvent,