Hardmask Composition Balancing Etch Resistance and Solubility
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Solution Overview
Problem
Existing lithographic techniques face challenges in forming ultra-fine patterns due to insufficient etch resistance and solubility of hardmask compositions, which are crucial for maintaining pattern integrity during the etching process.
Innovation Solution
A hardmask composition is developed, comprising a polymer with structural units represented by Chemical Formula 1, which includes aromatic hydrocarbon or heteroaromatic rings to enhance carbon content, and a solvent. This composition is applied to form a hardmask layer that provides improved etch resistance and solubility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional hardmask materials are used, then the lithographic process can be performed, but the etch resistance is insufficient leading to poor pattern integrity
Solution Approach 1:
The patent modifies the chemical composition parameters of the hardmask material by incorporating specific polymers with aromatic rings and fluorinated groups, changing the material's fundamental properties to achieve both high etch resistance and solubility control
Solution Approach 2:
The invention uses composite material formulation by combining multiple polymer components with specific functional groups (aromatic rings for etch resistance, fluorinated groups for solubility control) to achieve the desired balance of properties
2Strength
If hardmask composition with high carbon content is used to improve etch resistance, then etch resistance improves, but solubility decreases
Solution Approach 1:
The patent applies local quality by introducing specific functional groups (fluorinated groups) at specific locations within the polymer structure to provide solubility control, while the overall aromatic framework provides etch resistance
Solution Approach 2:
The invention changes the chemical parameters by incorporating fluorinated groups which modify the solubility characteristics without compromising the carbon-rich aromatic structure needed for etch resistance
3Manufacturing precision
If photoresist layer is used for pattern formation, then lithographic patterning is achieved, but the material layer cannot be directly etched due to insufficient hardmask protection
Solution Approach 1:
The patent introduces a hardmask layer as an intermediary between the photoresist and the material layer to be etched, providing the necessary protection and enabling successful pattern transfer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition achieves excellent etch resistance and solubility, enabling the formation of high-density, high-quality patterns that withstand the etching process, thus addressing the limitations of existing hardmask materials.
Implementation Method 1
A hardmask composition is developed, comprising a polymer with structural units represented by Chemical Formula 1, which includes aromatic hydrocarbon or heteroaromatic rings to enhance carbon content
Implementation Method 2
heat-treating the hardmask composition to form a hardmask layer
Data Source
AI summary
A hardmask composition, a hardmask layer that is manufactured from the hardmask composition, and a method of forming patterns by using the hardmask layer manufactured from the hardmask composition, the hardmask composition includes a polymer including a structural unit represented by Chemical Formula 1; and a solvent,