3D Hardmask Ion Implantation for Etch Selectivity
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Solution Overview
Problem
Conventional 3D hardmask formation processes face challenges in etch selectivity and efficiency, particularly at advanced technology nodes, limiting their effectiveness in manufacturing smaller electronic devices with denser circuits.
Innovation Solution
A method involving directional ion implantation to modify film properties on 3D structures, including selecting ion dosage, energy, and temperature, and configuring implantation angles to form a 3D hardmask with dopant gradients, enhancing etch selectivity and resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional hardmask formation processes are used, then manufacturing simplicity is maintained, but etch selectivity is insufficient
Solution Approach 1:
The patent applies parameter changes by modifying the physical and chemical properties of the hardmask film through controlled ion implantation. By adjusting ion species, dosage, energy, and temperature parameters, the film's compositional characteristics are altered to achieve superior etch selectivity while maintaining a manageable process workflow
Solution Approach 2:
The patent employs preliminary action by performing ion implantation on the hardmask film before the etching process. This pre-modification of the film's compositional characteristics ensures that the film is pre-prepared with enhanced etch resistance, allowing for more selective etching of underlying layers without requiring complex multi-step hardmask formation procedures
2Reliability
If ion implantation is used to modify film properties, then etch selectivity is improved, but process complexity increases
Solution Approach 1:
The patent applies local quality by selectively modifying only the hardmask film layer through ion implantation, leaving other process steps unchanged. The ion implantation parameters (species, dosage, energy, temperature) are optimized to affect only the intended film, creating localized compositional changes that enhance etch resistance without requiring complex integrated process modifications
Solution Approach 2:
The patent uses copying by implementing ion implantation as an additional step that can be applied to standard hardmask films without replacing the entire hardmask formation process. This approach copies the beneficial effects of complex processes onto simpler existing workflows, achieving enhanced performance through a add-on modification rather than complete process replacement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves etch selectivity and resistance of the 3D hardmask, enabling more precise and efficient processing in advanced integration schemes like fin isolation and gate-all-around structures.
Implementation Method 1
An ion dosage concentration and implantation energy may be selected and configured to modify compositional characteristics of the film and an implantation temperature may also be selected. Ions may be accelerated toward the film along the angle and bombard at least one surface of the film with the ions to form a modified portion of the film.
Data Source
AI summary
Embodiments of the present disclosure relate to precision material modification of three dimensional (3D) features or advanced processing techniques. Directional ion implantation methods are utilized to selectively modify desired regions of a material layer to improve etch characteristics of the modified material. For example, a modified region of a material layer may exhibit improved etch selectivity relative to an unmodified region of the material layer. Methods described herein are useful for manufacturing 3D hardmasks which may be advantageously utilized in various integration schemes, such as fin isolation and gate-all-around, among others. Multiple directional ion implantation processes may also be utilized to form dopant gradient profiles within a modified layer to further influence etching processes.