Cross-linkable Hardmask Monomer for Semiconductor Etch Resistance
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Solution Overview
Problem
The semiconductor industry faces challenges in forming a hardmask layer with both chemical resistance, heat resistance, and etch resistance while maintaining solubility for solvent-based spin-on coating methods, which are essential for creating fine patterns in ultra-fine techniques.
Innovation Solution
A monomer for a hardmask composition, represented by Chemical Formula 1, is developed, which includes a substituted or unsubstituted aromatic group and a hydroxyl group, enabling cross-linking to achieve excellent mechanical, chemical, and etch resistance, and is spin-coated to provide gap-fill and planarization characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a hardmask layer is formed by spin-on coating method, then ease of manufacture is improved, but chemical resistance and etch resistance deteriorate
Solution Approach 1:
The patent changes the chemical parameters of the hardmask composition by incorporating specific cross-linkable functional groups (epoxy, carboxyl, hydroxyl, amine groups) that react during heat treatment to form a cross-linked network structure. This transformation converts the physical state from soluble monomer to insoluble cross-linked polymer, achieving both spin-on coating compatibility and high chemical/etch resistance
Solution Approach 2:
The patent creates a composite material system combining the hardmask composition with a cross-linking agent that forms a cross-linked network structure. This composite approach integrates the benefits of spin-on coating (ease of manufacture) with the durability of cross-linked polymers (chemical and etch resistance), resolving the contradiction between processing ease and performance
2Ease of manufacture
If a hardmask layer is formed by spin-on coating method, then ease of manufacture is improved, but gap-fill characteristics and planarization characteristics deteriorate
Solution Approach 1:
The patent adjusts the molecular weight and viscosity parameters of the monomer composition to optimize flow characteristics during spin-on coating. The controlled molecular weight range ensures proper gap-fill behavior while maintaining solubility for coating application, resolving the contradiction between ease of manufacture and gap-fill precision
3Reliability
If cross-linking is performed to improve chemical resistance and etch resistance, then reliability is improved, but solubility for solvent deteriorates
Solution Approach 1:
The patent applies preliminary action by first forming a soluble monomer layer through spin-on coating, then subsequently inducing cross-linking through heat treatment. This sequence ensures the material is soluble during application but becomes resistant afterward, resolving the contradiction between solubility for manufacturing and resistance for performance
Solution Approach 2:
The patent utilizes phase transition from soluble monomer to insoluble cross-linked polymer through heat-induced cross-linking. This phase change allows the material to be processed in soluble form and then transformed into a resistant final state, reconciling the contradiction between solubility and resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition effectively satisfies chemical resistance, heat resistance, and etch resistance while ensuring solubility and gap-fill characteristics, enabling the formation of high-quality patterns with improved profile and planarization.
Implementation Method 1
capable of cross-linking to provide excellent mechanical, chemical, and etch resistance
Implementation Method 2
heat-treating the hardmask composition to provide a hardmask layer
Data Source
AI summary
Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same.In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.