Spin-On Hardmask Monomer for Fine Pattern Etch Resistance
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Solution Overview
Problem
The semiconductor industry faces challenges in forming fine patterns with excellent profiles due to the difficulty in achieving both chemical resistance, heat resistance, and solubility in hardmask compositions, especially when using the spin-on coating method, which requires a balance between these properties.
Innovation Solution
A monomer represented by specific chemical formulas is used in a hardmask composition, which includes aliphatic or aromatic cyclic groups, functional groups for improved solubility and cross-linking, and a solvent, applied via spin-on coating to form a hardmask layer that provides heat resistance, etch resistance, and planarization characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a hardmask layer is formed using traditional chemical vapor deposition, then chemical resistance and heat resistance are improved, but solubility and ease of coating are worsened
Solution Approach 1:
The patent changes the chemical composition parameters of the hardmask material by using a specific monomer with aromatic cyclic groups and functional groups (carboxyl, hydroxyl, amino, or carboxamide) that enables both CVD formation and solution processing. This parameter change allows the material to achieve both high resistance properties and improved solubility/coating characteristics.
Solution Approach 2:
The patent creates a composite hardmask system by combining the specially designed monomer with specific functional groups and potentially other additives or polymers. This composite approach allows the material to simultaneously exhibit chemical resistance, heat resistance, and improved solubility for spin-on coating processes.
2Manufacturing precision
If the pattern size is reduced to ultra-fine scale, then manufacturing precision is improved, but the difficulty of forming fine patterns with excellent profiles worsens
Solution Approach 1:
The patent introduces a hardmask layer as an intermediary between the photoresist and the underlying layers. This intermediate layer provides a stable foundation that enables precise pattern transfer at ultra-fine scales by mediating the etching process and improving pattern fidelity.
Solution Approach 2:
The patent changes the physical and chemical parameters of the hardmask material (using a monomer with specific aromatic cyclic groups and functional groups) to optimize its properties for ultra-fine pattern formation, including improved resolution, etch resistance, and profile control.
3Manufacturing precision
If a hardmask layer is added between material layer and photoresist layer, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent designs the hardmask layer material to perform multiple functions simultaneously: it serves as a protective barrier during etching, provides a stable platform for pattern transfer, enables gap-fill, and allows for planarization. This multi-functionality reduces the need for separate specialized layers.
Solution Approach 2:
The patent optimizes the composition and properties of the hardmask layer (using specific monomers with aromatic cyclic groups and functional groups) to achieve the desired balance between improved pattern profile quality and controlled process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hardmask composition ensures excellent solubility, gap-fill, and planarization characteristics, along with heat and etch resistance, enabling the formation of high-quality patterns even at small sizes, as demonstrated by its performance in various evaluations.
Implementation Method 1
heat treatment and cross-linking reactions
Data Source
AI summary
Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition.In the above Chemical Formula 1,A1 to A3, X1 to X3, L1, L2, n and m are the same as described in the detailed description.