Hardmask Patterning via Ultraviolet Light Exposure
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Solution Overview
Problem
Traditional photolithography processes are time and process intensive due to the need for photoresist deposition and etching steps in hardmask patterning, which can be laborious and inefficient.
Innovation Solution
The method involves depositing a hardmask layer, such as silicon oxide, on a substrate and exposing it to ultraviolet light to create a pattern, followed by a wet etch to remove unexposed portions, eliminating the need for photoresist deposition and etching, and optionally subjecting the hardmask to annealing or plasma treatments to modify its properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional photolithography process is used with photoresist deposition and etching, then hardmask patterning can be achieved, but processing time and process complexity increase
Solution Approach 1:
The patent extracts and eliminates the photoresist deposition and etching steps from the traditional photolithography process. By directly patterning the hardmask layer using UV light exposure and selective removal, the method removes the intermediate photoresist layer, thereby reducing processing time while maintaining patterning quality.
Solution Approach 2:
The patent applies a preliminary UV light exposure treatment to the hardmask layer before final patterning. This pre-exposure modifies the hardmask material properties in targeted areas, enabling selective removal without requiring photoresist, thus streamlining the process and reducing overall processing time.
2Manufacturing precision
If traditional photolithography process is used with multiple deposition and etching steps, then hardmask patterning can be achieved, but process complexity increases
Solution Approach 1:
The patent merges the patterning and hardmask formation steps into a single integrated process. By combining UV light exposure, selective chemical treatment, and hardmask removal into one sequence, the method eliminates the separate photoresist deposition, exposure, development, and etching steps, thereby reducing process complexity while maintaining patterning precision.
Solution Approach 2:
The hardmask layer serves multiple functions: it acts as both the pattern definition layer and the protective mask layer. The UV-exposed hardmask regions directly define the pattern without requiring a separate photoresist layer, making the hardmask material multi-functional and simplifying the overall process flow.
3Manufacturing precision
If photoresist deposition and etching steps are performed, then hardmask patterning can be achieved, but processing efficiency decreases
Solution Approach 1:
The patent skips the time-consuming photoresist deposition and etching steps by directly exposing and treating the hardmask layer with UV light. This allows the process to rush through to the essential patterning function without performing intermediate steps, thereby improving processing efficiency while maintaining patterning quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces processing time and complexity by directly patterning the hardmask layer using ultraviolet light, allowing for efficient hardmask patterning without the need for photoresist deposition and etching, thereby streamlining the photolithography process.
Implementation Method 1
portions of the hardmask layer are exposed with ultraviolet light, such as light less than 348 nm. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material.
Implementation Method 2
an etching process, such as a wet etch including for example HF, NH4OH, SCl, and RCA, may occur that removes the unexposed portions of the hardmask
Implementation Method 3
the hardmask may be annealed, baked or subjected to a plasma treatment
Data Source
AI summary
Method and systems for patterning a hardmask film using ultraviolet light is disclosed according to one embodiment of the invention. Embodiments of the present invention alleviate the processing problem of depositing and etching photoresist in order to produce a hardmask pattern. A hardmask layer, such as, silicon oxide, is first deposited on a substrate within a deposition chamber. In some cases, the hardmask layer is baked or annealed following deposition. After which, portions of the hardmask layer are exposed with ultraviolet light. The ultraviolet light produces a pattern of exposed and unexposed portions of hardmask material. Following the exposure, an etching process, such as a wet etch, may occur that removes the unexposed portions of the hardmask. Following the etch, the hardmask may be annealed, baked or subjected to a plasma treatment.