Hardmask Polymer Composition for Etch Resistance and Planarization
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Solution Overview
Problem
Current lithographic techniques face challenges in forming fine patterns with excellent profiles as the size of patterns decreases, necessitating the use of a hardmask layer to enhance etch resistance and pattern transfer, but existing hardmask layers often have limitations in gap-filling and planarization characteristics.
Innovation Solution
A hardmask composition comprising a polymer with a structural unit represented by Chemical Formula 1, including a large aromatic hydrocarbon group, which increases carbon content, and a solvent, improving etch resistance and solubility, thereby forming a hardmask layer with enhanced gap-filling and planarization characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a hardmask layer is formed to enhance etch resistance, then etch resistance is improved, but gap-filling and planarization characteristics deteriorate
Solution Approach 1:
The patent employs a composite polymer structure combining aromatic rings (for etch resistance) with flexible linkers and polar groups (for gap-filling and planarization). This multi-component molecular architecture allows simultaneous achievement of high etch resistance and excellent gap-filling/planarization characteristics that single-material systems cannot provide.
Solution Approach 2:
The patent systematically varies molecular weight, aromatic ring substitution patterns, and side-chain configurations to optimize the balance between etch resistance and planarization. By controlling these molecular parameters, the hardmask composition achieves both high etch resistance and superior gap-filling capabilities.
2Strength
If carbon content is increased to improve etch resistance, then etch resistance is improved, but solubility deteriorates
Solution Approach 1:
The patent introduces polar groups and flexible linkers at specific locations within the polymer chain (local regions) while maintaining high aromatic ring content overall. This localized modification of chemical properties enables the material to maintain high bulk carbon content for etch resistance while having specific soluble regions that enhance overall solubility in processing solvents.
Solution Approach 2:
The patent uses specific solvent molecules as intermediaries that interact with the polar groups and flexible linkers in the polymer, facilitating dissolution. These intermediary solvent-polymer interactions enable high solubility even in materials with high carbon content, as the intermediaries bridge the hydrophobic aromatic regions and the processing solvent.
Data Source
AI summary
A hardmask composition, a hardmask layer manufactured from the hardmask composition, and a method of forming a pattern or patterns using a hardmask layer manufactured from the hardmask composition, the hardmask composition includes a polymer that includes a structural unit represented by Chemical Formula 1; and a solvent: