HBM Cooling TSV Network for Interface Die Heat Dissipation
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Solution Overview
Problem
Vertically-stacked High Bandwidth Memory (HBM) devices face challenges in thermal dissipation, particularly due to the interface die being located at the bottom and farthest from conventional cooling media, leading to inadequate cooling and potential deleterious effects.
Innovation Solution
The implementation of a cooling network within the HBM device, which includes a thermally conductive layer on the interface die and active through substrate vias (TSVs) that extend from the interface die to the uppermost memory die, along with a cooling element on the upper surface of the uppermost memory die to enhance heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If vertically-stacked HBM device structure is used to increase memory capacity and bandwidth, then memory performance is improved, but thermal dissipation capability deteriorates due to interface die being located farthest from cooling media
Solution Approach 1:
The patent introduces a vertical thermal conduction pathway through the stacked die structure by implementing thermally conductive via structures that extend heat dissipation from the interface die upward through the memory dies to the top surface, where cooling media can be applied. This transforms the thermal management approach from horizontal conduction to vertical conduction, directly addressing the thermal dissipation challenge in the stacked configuration.
Solution Approach 2:
The patent introduces thermally conductive via structures as intermediary elements between the interface die and the cooling media. These via structures serve as thermal conduits that transfer heat from the interface die (which cannot directly contact cooling media) through the memory dies to the top surface where cooling can be applied, effectively mediating the thermal transfer path.
2Ease of operation
If interface die is positioned at the bottom of the stack to provide electrical connections, then device functionality is achieved, but thermal management capability deteriorates
Solution Approach 1:
The patent maintains the interface die at the bottom for electrical connectivity while introducing vertical thermal conduction pathways that transport heat upward through the stack. This separates the electrical function (at the bottom) from the thermal management function (vertical transport to top surface), allowing both requirements to be satisfied simultaneously.
Solution Approach 2:
The patent segments the thermal management function from the electrical connection function by creating dedicated thermally conductive via structures that handle heat transfer independently from the electrical interconnects. This segmentation allows the interface die to fulfill its electrical connection role while thermal management is handled through the vertical via pathways.
3Area of stationary object
If multiple memory dies are stacked vertically to reduce footprint, then device area is reduced, but heat dissipation difficulty increases
Solution Approach 1:
The patent addresses heat dissipation in the vertical dimension by creating thermal conduction pathways that extend from the bottom interface die through the stacked memory dies to the top surface. This vertical thermal management approach complements the vertical stacking configuration, allowing compact footprint while managing heat through the z-dimension rather than requiring increased planar area.
Solution Approach 2:
The patent converts the potential harm of heat accumulation in the stacked structure into a benefit by utilizing the vertical stack itself as the heat conduction pathway. The thermally conductive via structures transform the stacked die configuration from a heat-trapping structure into an efficient thermal conduction channel, where the vertical arrangement that saves area becomes the very pathway that removes heat.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively transports heat away from the interface die and memory dies, reducing the risk of overheating and associated deleterious effects, thereby improving the operational reliability and performance of the HBM device.
Implementation Method 1
a cooling network within the HBM device, which includes a thermally conductive layer on the interface die and active through substrate vias (TSVs) that extend from the interface die to the uppermost memory die
Data Source
AI summary
High-bandwidth memory (HBM) devices and associated systems and methods are disclosed herein. In some embodiments, the HBM devices include a first die, a plurality of second dies carried by a signal routing region of the first die, and active through substrate vias (TSVs) positioned within a footprint of the signal routing region. The active TSVs extend from a first metallization layer in the first die to a second metallization layer in an uppermost memory die. The HBM devices also include a cooling network configured to transport heat away from the first die. For example, the cooling network can include a thermally conductive layer carried by a thermal region of the first die and cooling TSVs in contact with the thermally conductive layer. The thermally conductive TSVs extend from the thermally conductive layer to an elevation at or above a top surface of the uppermost memory die.