HBM Interface Die Layout for Heat-Mitigation in SiP Packages

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Solution Overview

Problem

High-bandwidth memory devices in system-in-package configurations face challenges with increasing power density due to shrinking size and increasing functionality, leading to heat-related issues that degrade communication channels and increase memory loss.

Innovation Solution

The solution involves positioning heat-generating components, such as IO circuits, closer to thermal interface materials by rearranging the layout of the SiP device, using a communication substrate above the host and HBM devices to reduce communication channel length and eliminate the need for certain TSVs, thereby reducing heat production and manufacturing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the device footprint is reduced to meet market demands, then the device size decreases, but heat dissipation becomes more difficult and power density increases

Engineering Contradiction:
Improvedevice footprintVSAvoidheat dissipation
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The patent transitions from planar heat dissipation to three-dimensional heat management by stacking memory dies vertically and positioning heat-generating IO circuits adjacent to thermal interface materials in the Z-dimension, enabling effective heat dissipation despite reduced footprint

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent applies different thermal management strategies to different regions: heat-generating IO circuits are positioned adjacent to thermal interface materials while memory dies are positioned on the opposite side, creating localized heat dissipation paths optimized for each component's thermal characteristics

Inventive Principle:
Principle #3Local quality

2Productivity

If circuit density and functionality are increased, then device performance improves, but power consumption and heat generation increase

Engineering Contradiction:
Improvedevice performanceVSAvoidpower consumption
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The patent achieves high performance by stacking multiple memory dies vertically to increase capacity and bandwidth while positioning IO circuits in adjacent tiers to minimize communication distances, reducing power consumption despite increased functionality

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent introduces substrate-backed IO circuits as intermediary components between memory dies and external interfaces, enabling efficient data transfer and reducing the energy required for communication across the package

Inventive Principle:
Principle #24Intermediary (Mediator)

3Speed

If communication channel length is reduced, then data transfer speed improves, but device layout complexity increases

Engineering Contradiction:
Improvedata transfer speedVSAvoidlayout complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent achieves short communication channels by positioning IO circuits in tiers adjacent to memory dies and utilizing through-substrate vias for vertical interconnections, enabling high-speed data transfer while maintaining a systematic stacked layout rather than increasing planar complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively dissipates heat from the IO circuits, reducing operational temperatures, improving data retention, and extending the lifetime of the SiP device while minimizing manufacturing costs and increasing available space for other circuits.

Implementation Method 1

positioning heat-generating components, such as IO circuits, closer to thermal interface materials

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20250316602A1Heat-mitigating high-bandwidth devices in system-in-package devices and associated systems and methods
Publication Date: 2025.10.09 MICRON TECHNOLOGY INC
  • US20250316602A1 patent drawing
  • US20250316602A1 patent drawing
  • US20250316602A1 patent drawing

AI summary

System-in-package (SiP) devices, and associated systems and methods are disclosed herein. In some embodiments, a SiP device can include a base substrate, as well as a host device and a heat-mitigating high-bandwidth memory (HBM) device each integrated with the base substrate. The heat-mitigating HBM device can include a stack of one or more memory dies and an interface die carried by the stack of one or more memory dies. The interface die includes an input/output (IO) circuit that is accessible through an upper surface of the interface die. The SiP device can also include a communication substrate carried by the host device and the heat-mitigating HBM device, as well as a thermal interface material carried by the communication substrate. The communication substrate can include one or more communication channels communicably coupling the IO circuit of the interface die to the host device.