h-BN Quantum Sensor Chip With On-Chip Microwave Injection
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Solution Overview
Problem
Current quantum magnetometers using hexagonal boron nitride (h-BN) are bulky and limited by cavity-based microwave injection, which restricts their applications, and the dry transfer method for h-BN is slow and unsuitable for mass production, making them one-time use devices.
Innovation Solution
A miniaturized chip with a constricted gold shorted co-planar waveguide integrates 2D materials for on-chip microwave injection and plasmonic enhancement, using gold nano-pillars to create deterministic defects and enable reusable h-BN based quantum magnetometers through a scalable fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If cavity-based microwave injection is used for quantum magnetometers, then microwave excitation can be achieved, but the device becomes bulky and applications are restricted
Solution Approach 1:
The patent extracts the microwave injection function from a separate cavity structure and integrates it directly into the chip substrate through coplanar waveguides. This eliminates the need for external bulky cavities while maintaining microwave excitation capability for quantum magnetometer operation.
Solution Approach 2:
The patent combines the microwave transmission lines and quantum magnetometer active regions into a single integrated chip structure. The coplanar waveguides are fabricated on the same substrate as the h-BN layer, merging previously separate components into one compact device.
2Reliability
If dry transfer method is used for h-BN, then quantum magnetometer can be fabricated, but the process is slow and unsuitable for mass production
Solution Approach 1:
The patent prepares the h-BN layer in advance on a separate substrate with pre-fabricated contact pads and waveguide structures. This preliminary preparation allows for standardized, pre-tested components that can be rapidly transferred and integrated, significantly speeding up the fabrication process compared to traditional dry transfer methods.
Solution Approach 2:
The patent replaces the manual, step-by-step mechanical dry transfer process with a scalable fabrication approach using photolithography and etching. This substitution enables parallel processing of multiple devices on a single wafer, dramatically increasing productivity for mass production.
3Duration of action of stationary object
If reusable quantum magnetometers are desired, then device durability must be improved, but current one-time use design limits applications
Solution Approach 1:
The patent modifies the structural parameters of the quantum magnetometer chip, specifically designing robust contact pads and protective structures that enable the device to withstand repeated handling and measurement cycles. This structural optimization transforms the device from a fragile one-time use component to a durable reusable instrument.
Solution Approach 2:
The patent incorporates protective design elements and robust fabrication techniques that preemptively protect the quantum magnetometer from damage during repeated use. The sturdy substrate and carefully designed contact structures provide inherent protection against mechanical stress and environmental degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides high RF magnetic field concentration, impedance stability, and enables mass production of reusable quantum magnetometers with enhanced sensitivity and precision for magnetic field detection.
Implementation Method 1
The layer of the multi-layer h-BN may be irradiated for defect generation in the layer of the multi-layer h-BN
Implementation Method 2
A miniaturized chip with a constricted gold shorted co-planar waveguide integrates 2D materials for on-chip microwave injection and plasmonic enhancement
Implementation Method 3
These defects may be utilized as quantum magnetometers via optical detection of magnetic resonance (ODMR)
Data Source
AI summary
A method, computer program product, and sensory chip for use as a quantum magnetometer. A silicon-based material may be coated with a first metal material and a second metal material to create a substrate. A multi-layer hexagonal boron nitride (h-BN) may be transferred onto the substrate. A protective film may be coated on a layer of the multi-layer h-BN. The layer of the multi-layer h-BN may be irradiated for defect generation in the layer of the multi-layer h-BN. An active region of the substrate may be etched. Resist of the substrate may be removed. Contact pads may be created for the substrate. A layer of the first metal material and the second metal material may be coated on the substrate. Additional resist of the substrate may be removed. The substrate may be cut into a plurality of smaller substrates, wherein each smaller substrate of the plurality of smaller substrates includes a h-BN based quantum magnetometer.