h-BN Quantum Sensor With Piezoelectric Strain Tuning
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Solution Overview
Problem
Current h-BN strain sensors lack the ability to adjust for strain caused by movement, leading to inaccurate or fluctuating readings due to disrupted light-matter interaction with static features like plane gold or nanopillars.
Innovation Solution
Incorporating a piezoelectric substrate, such as aluminum nitride, allows for real-time adjustments to the sensor's sensitivity through electrical biasing, enabling it to adapt to dynamic strain conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If static features like plane gold or nanopillars are used for light-matter interaction, then the sensor structure is simple, but the sensor cannot adjust for strain caused by movement leading to inaccurate readings
Solution Approach 1:
The patent replaces static features (plane gold or nanopillars) with a dynamic piezoelectric substrate that can be electrically biased to adjust its strain state in real-time. This allows the sensor to adapt to movement-induced strain by actively controlling the light-matter interaction conditions through applied voltage, transforming a static structure into a dynamically adjustable one.
Solution Approach 2:
The patent changes the physical state of the substrate by applying electrical bias to the piezoelectric material, which alters its strain parameters. This enables dynamic adjustment of the sensor's response characteristics without changing the physical structure, allowing adaptation to different strain conditions through electrical parameter control.
2Reliability
If static features are used in the sensor, then manufacturing is simpler, but movement disrupts light-matter interaction causing fluctuating readings
Solution Approach 1:
The patent introduces a piezoelectric substrate that can be electrically biased to dynamically adjust its strain state, allowing the sensor to compensate for movement-induced disruptions. This active control mechanism maintains reliable light-matter interaction even during movement, improving reading accuracy without requiring complex mechanical stabilization.
Solution Approach 2:
The patent replaces mechanical stabilization approaches with an electrical control system. Instead of using complex mechanical structures to prevent movement disruption, the patent uses electrical biasing of the piezoelectric substrate to actively compensate for strain, substituting a simpler electrical control mechanism for complex mechanical solutions.
3Adaptability or versatility
If the sensor uses static light-matter interaction features, then device structure is simpler, but the sensor cannot adapt to dynamic strain conditions
Solution Approach 1:
The patent uses electrical parameter changes (applying voltage) to the piezoelectric substrate to dynamically alter its physical state and strain characteristics. This allows the sensor to adapt to dynamic strain conditions by controlling the light-matter interaction parameters through electrical means, achieving adaptability through parameter control rather than structural complexity.
Solution Approach 2:
The patent applies local quality changes by creating specific strain zones in the piezoelectric substrate through electrical biasing. The applied voltage creates localized strain fields that optimize light-matter interaction in specific regions, allowing the sensor to adapt to dynamic conditions by modifying local substrate properties rather than requiring complex overall structural changes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sensor provides accurate strain readings even during movement by actively controlling light interaction with boron vacancy defects, enhancing its applicability in various fields.
Implementation Method 1
An electrical bias applied to the one or more electrical contacts by the external electrical biasing circuit may induce a controllable strain within the piezoelectric substrate
Implementation Method 2
a plasmonic waveguide above the piezoelectric substrate
Implementation Method 3
spin-active boron vacancy defects may be utilized as, e.g., quantum magnetometers via optical detection of magnetic resonance (ODMR)
Data Source
AI summary
A method and computer program product for fabricating a quantum sensor, and a quantum sensor. The quantum sensor may be fabricated, wherein the quantum sensor includes a piezoelectric substrate. The quantum sensor may further include a plasmonic waveguide above the piezoelectric substrate. The quantum sensor may further include a 2D-material layer above the plasmonic waveguide. The quantum sensor may further include one or more electrical contacts below the piezoelectric substrate.