h-BN Quantum Sensor Chip With Nano-Pillars for On-Chip Microwave Injection
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Solution Overview
Problem
Current quantum magnetometers using hexagonal Boron Nitride (h-BN) are bulky and limited by cavity-based microwave injection, which restricts their applications, and the dry transfer method for h-BN is slow, time-consuming, and not suitable for mass production, making devices one-time use only.
Innovation Solution
Integration of h-BN onto a miniaturized sensor chip with a constricted gold shorted co-planar waveguide and gold nano-pillars for on-chip microwave injection and plasmonic enhancement, allowing for deterministic defect creation and reusable devices through advanced fabrication processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If cavity-based microwave injection is used for quantum magnetometers, then magnetic field detection capability is achieved, but device size becomes bulky and portability is reduced
Solution Approach 1:
The patent extracts the microwave injection function from a separate cavity structure and integrates it directly into the sensor chip through coplanar waveguides. This separation of the cavity function from the sensor assembly eliminates the need for bulky external cavities while maintaining the necessary microwave field generation for quantum magnetometry operations
Solution Approach 2:
The patent merges the microwave injection structure and the quantum sensor into a single integrated chip platform. The coplanar waveguides are fabricated directly on the same substrate as the h-BN quantum sensor, combining previously separate components into one compact unit that maintains full functionality while dramatically reducing overall device size
2Reliability
If dry transfer method is used for h-BN fabrication, then quantum sensor functionality is achieved, but production speed is slow and mass production is not feasible
Solution Approach 1:
The patent segments the fabrication process into distinct stages: first fabricating the h-BN crystal with defects on a separate substrate, then transferring it to the final sensor chip platform. This segmentation allows each stage to be optimized independently, with the transfer process enabling parallel production of multiple sensors while maintaining the high functionality requirements
Solution Approach 2:
The patent performs preliminary fabrication of the h-BN quantum sensor layer on a convenient substrate before final assembly. This preliminary action allows for optimized defect creation and crystal growth conditions to be established first, then the pre-fabricated layer is transferred to the final chip structure, enabling standardized production workflows that can be scaled
3Measurement precision
If h-BN is transferred onto sensor chip, then quantum magnetometer functionality is achieved, but device becomes one-time use only and reusability is lost
Solution Approach 1:
The patent merges the h-BN quantum sensor layer with the sensor chip substrate through direct integration rather than temporary bonding. The h-BN layer is transferred and permanently integrated into the chip structure with electrical and mechanical connections that enable repeated use, transforming the device from disposable to reusable while maintaining quantum functionality
Solution Approach 2:
The patent designs the device architecture to allow recovery and reuse of the expensive h-BN quantum sensor layer. The integration method enables the sensor to be maintained and reused across multiple measurement cycles, and if needed, the valuable h-BN layer can be recovered from a failed chip for transfer to a new substrate, maximizing resource utilization
4Productivity
If miniaturized sensor chip with integrated waveguide is used, then device portability and mass production capability are improved, but impedance stability may be affected
Solution Approach 1:
The patent carefully controls and optimizes the geometric parameters of the coplanar waveguides during fabrication. By adjusting line widths, spacing, and substrate properties, the waveguide impedance is tuned to achieve stable 50-ohm matching despite the miniaturized scale, enabling both mass production compatibility and electrical performance stability
Solution Approach 2:
The patent implements local optimization of the waveguide structure at critical regions of the chip. The coplanar waveguide geometry and surrounding materials are specifically engineered at each location to maintain consistent impedance characteristics, ensuring that the miniaturized design does not compromise electrical stability while enabling compact fabrication
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-resolution, precise, and accurate magnetic field detection with improved impedance stability and portability, facilitating mass production of reusable quantum magnetometers.
Implementation Method 1
These defects may be utilized as quantum magnetometers via optical detection of magnetic resonance (ODMR)
Implementation Method 2
microwave excitation may be used to create transitions in the quantum levels of the VB− defects
Implementation Method 3
Integration of h-BN onto a miniaturized sensor chip with a constricted gold shorted co-planar waveguide and gold nano-pillars for on-chip microwave injection and plasmonic enhancement
Implementation Method 4
The 2D-material may be irradiated with a plurality of ions to create deterministic defects where the 2D-material stretches over the array of nano-pillars
Data Source
AI summary
A method, computer program product, and sensor chip for use as a quantum magnetometer. An array of nano-pillars may be fabricated. A 2D-material may be transferred on top of the array of nano-pillars. The array of nano-pillars and the 2D-material may be combined with a sensor chip, wherein the array of nano-pillars and the 2D-material may be combined with the sensor chip at a constriction region of the sensor chip.