Hexagonal Boron Nitride Thick Film Formation via Solution Precursor Dissolution
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Solution Overview
Problem
Current methods for producing hexagonal boron nitride (h-BN) thick films face challenges such as high process temperatures, non-uniform growth, and the influence of crystal grain size and grain boundaries, making it difficult to achieve large-area, high-quality h-BN thick films with controlled thickness.
Innovation Solution
A method involving substrate heating, h-BN precursor supply, precursor dissolving, and cooling, followed by exfoliation and transfer of the h-BN thick film to another substrate using an aqueous solution and electrochemical separation, allowing for the formation of a large-thickness, uniform h-BN thick film laminate without damage to the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CVD method is used to produce h-BN nanosheet, then h-BN nanosheet can be produced, but process temperature becomes very high and large area production becomes unfavorable
Solution Approach 1:
The patent changes the temperature parameter from high temperature (1000°C or more in CVD) to low temperature (room temperature or slightly elevated) by using a solution-based precursor supply method instead of gas-phase deposition, thereby achieving h-BN nanosheet production without very high process temperatures
Solution Approach 2:
The patent replaces the thermal field (CVD method) with a chemical field (solution-based precursor supply), substituting high-temperature gas-phase deposition with low-temperature solution chemistry to achieve the same h-BN nanosheet production goal
2Ease of manufacture
If mechanical exfoliation method is used, then production is simple, but mass production becomes difficult
Solution Approach 1:
The patent employs self-assembly of h-BN nanosheets from solution onto the substrate, where the nanosheets automatically form and organize themselves through chemical interactions, eliminating the need for complex mechanical exfoliation while enabling scalable production
Solution Approach 2:
The patent uses solution-based (hydraulic) precursor supply instead of mechanical methods, allowing precursors to be delivered and deposited through liquid flow, which simplifies the manufacturing process while enabling mass production through controlled solution processing
3Reliability
If catalyst metal with polycrystalline structure is used, then CVD deposition can occur, but surface quality of h-BN degrades due to grain boundaries
Solution Approach 1:
The patent extracts and removes the catalyst metal component from the h-BN production process entirely, using a substrate without metal catalyst to support h-BN nanosheets, thereby eliminating the source of grain boundaries and improving surface quality
Solution Approach 2:
The patent introduces an aqueous solution as an intermediary medium to supply h-BN precursors to the substrate, replacing the direct metal catalyst contact method, which eliminates the harmful effect of grain boundaries while maintaining the deposition process
4Manufacturing precision
If high temperature sintering is performed to increase grain size, then crystal structure improves, but production cost and process complexity increase
Solution Approach 1:
The patent performs preliminary formation of h-BN nanosheets at low temperature through solution-based precursor supply, eliminating the need for subsequent high-temperature sintering processes, thereby maintaining crystal structure quality while reducing process complexity
Solution Approach 2:
The patent changes the temperature parameter from high temperature sintering to low temperature solution processing, achieving crystal structure formation through controlled chemical reactions in solution rather than thermal treatment, which simplifies the overall process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of high-quality, large-area h-BN thick films with controlled thickness, suitable for insulation and buffer layers in electronic devices, offering improved insulation characteristics and economic efficiency through substrate reuse.
Implementation Method 1
a substrate heating step of heating a first substrate
Implementation Method 2
a precursor dissolving step of dissolving the supplied h-BN precursors in the substrate; and a substrate cooling step of cooling the first substrate in which the h-BN precursors are dissolved
Data Source
AI summary
The present disclosure relates to a method of producing a multilayer hexagonal boron nitride (h-BN) thick film on a substrate, and more particularly, to a method of forming a multilayer h-BN thick film on a substrate including (a) a substrate heating step of heating a first substrate, (b) a h-BN precursor supply step of supplying h-BN precursors to the heated first substrate, (c) a precursor dissolving step of dissolving the supplied h-BN precursors in the first substrate, and (d) a substrate cooling step of cooling the first substrate containing the dissolved h-BN precursors therein, and a laminate including a multilayer h-BN thick film prepared by the preparation method and a substrate which forms a stack structure with the h-BN thick film.