H-Bridge Power Module With Central Control Chip

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Solution Overview

Problem

Conventional H-bridge circuits face reliability issues due to mechanically vulnerable connecting leads and require additional external drive circuits, complicating their construction and usage.

Innovation Solution

A power semiconductor module with four power semiconductor chips and a semiconductor control chip, arranged on large-area lead chip contact areas, where n-channel and p-channel chips are connected to earth potential and separate supply voltage sources, respectively, simplifying construction and enhancing reliability by eliminating individual lead pins and using a central control chip for full-bridge functionality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If connecting leads are individually anchored in the housing, then the H-bridge circuit can be constructed, but the connecting leads are mechanically vulnerable and may break under loading

Engineering Contradiction:
Improveconstruction simplicityVSAvoidmechanical reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent merges multiple individual connecting leads into a single robust leadframe structure. The leadframe integrates multiple connection points and electrical connections into one mechanically strong component, eliminating the vulnerability of individually anchored leads while maintaining construction simplicity.

Inventive Principle:
Principle #5Merging (Combining)

2Ease of manufacture

If separate low-side switches and double high-side switch are used, then the H-bridge circuit can be constructed, but additional external drive circuits become necessary

Engineering Contradiction:
Improvemechanical constructionVSAvoidcontrol circuit complexity
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent combines multiple power semiconductor chips (low-side switches and high-side switches) onto a single leadframe structure. This integration allows the H-bridge circuit to be controlled via gate electrodes directly on the leadframe, eliminating the need for additional external drive circuits while maintaining mechanical construction feasibility.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If power semiconductor chips are mounted on mutually insulated lead mounting plates, then the H-bridge circuit can be constructed, but the mechanical construction becomes complex

Engineering Contradiction:
Improveelectrical insulationVSAvoidmechanical construction complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges multiple lead mounting plates into a single integrated leadframe structure that provides both mechanical support and electrical insulation. The leadframe is designed with insulated regions and conductive regions integrated into one component, simplifying the mechanical construction while maintaining the necessary electrical insulation between different circuit elements.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS7449778B2Power semiconductor module as H-bridge circuit and method for producing the same
Publication Date: 2008.11.11 INFINEON TECH AUSTRIA AG
  • US7449778B2 patent drawing
  • US7449778B2 patent drawing
  • US7449778B2 patent drawing

AI summary

A power semiconductor module (41) as H-bridge circuit (42) has four power semiconductor chips (N1, N2, P1, P2) and a semiconductor control chip (IC). The semiconductor chips (N1, N2, P1, P2, IC) are arranged on three mutually separate large-area lead chip contact areas (43 to 45) of a lead plane (80). The semiconductor control chip (IC) is arranged on a centrally arranged lead chip contact area (45). An n-channel power semiconductor chip (N1, N2) as low-side switch (58, 59) and a p-channel power semiconductor chip (P1, P2) as high-side switch (48, 49) are in each case arranged on two laterally arranged lead chip contact areas (43, 44). The n-channel power semiconductor chips (N1, N2) are jointly at an earth potential (50) and the p-channel power semiconductor chips (P1, P2) are electrically connected to separate supply voltage sources (VS1, VS2).