Heat Actuated Tip Array Lithography for Sub-100 nm Patterning
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Solution Overview
Problem
Conventional lithography methods fail to efficiently pattern nanoscale features at low costs due to diffraction limits and require expensive equipment, and existing techniques for sub-diffraction limit patterning are either low throughput or restricted to small areas.
Innovation Solution
A method involving a tip array with a projector system that subdivides images into frame sections, using a digital micromirror device and macro lens to project radiation patterns onto the tip array, allowing for rapid and arbitrary patterning of sub-100 nm features across a large surface by selectively irradiating and actuating individual tips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional far-field optical lithography is used, then the equipment cost is low and operation is simple, but the lateral feature resolution is diffraction-limited to approximately half the incident wavelength
Solution Approach 1:
The patent introduces a near-field aperture array as an intermediary optical element that couples the illumination source to the substrate. This aperture array enables sub-diffraction limit patterning by utilizing evanescent fields while maintaining a relatively simple overall system architecture that can be integrated with conventional lithography tools.
Solution Approach 2:
The patent transitions from far-field optical lithography to near-field lithography by introducing a intermediate imaging plane with aperture arrays. This dimensional change in the optical path allows resolution beyond the conventional diffraction limit while maintaining system simplicity.
2Productivity
If SNP techniques are used for sub-diffraction limit patterning, then the feature resolution is improved, but the throughput is low and the scan area is restricted to several hundred microns
Solution Approach 1:
The patent divides the imaging process into multiple frame sections that can be independently addressed by the aperture array. This segmentation allows the system to rapidly switch between different pattern regions, enabling both high throughput and large area patterning by processing multiple sections in parallel or sequence without mechanical scanning.
3Manufacturing precision
If SNP techniques are used, then sub-diffraction limit features are achieved, but complex feedback systems and piezo-controlled manipulation are required
Solution Approach 1:
The patent employs a deformable near-field aperture array that can dynamically adjust its configuration. This dynamic capability allows the system to maintain optimal performance across different patterning conditions without requiring complex static feedback control systems, as the aperture array can adapt its shape and position programmatically.
4Adaptability or versatility
If BPL is used with a tip array, then sub-diffraction limit patterning is achieved, but all tips act in unison making it useful only for pattern replicas
Solution Approach 1:
The patent implements independent addressability of individual tips or aperture elements within the array. This local quality control allows different regions of the array to perform different functions simultaneously, enabling the creation of complex, non-replicated patterns while maintaining a relatively simple overall device structure through localized control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables rapid and efficient patterning of complex patterns at the nanoscale without the need for complex masking or manipulation of the tip array, allowing for large-scale images with small features and variable exposure times, thereby overcoming the limitations of conventional lithography.
Implementation Method 1
projecting a first pattern of radiation onto the tip array to selectively irradiate one or more tips of the tip array
Implementation Method 2
projecting a pattern of radiation onto the tip array to selectively irradiate and actuate individual tips
Implementation Method 3
Heat actuated and projected lithography systems and methods
Data Source
AI summary
In accordance with an embodiment of the disclosure, a method of patterning can include dividing an image into a set of frame sections; determining a tip pattern for a respective portion of an image to be patterned by each tip of the tip array in each frame section of the set of frame sections; disposing the tip array in a patterning position in a first location of the substrate corresponding to a location of the substrate in which the first frame section in the set of frame sections is to be patterned; projecting a first pattern of radiation onto the tip array to selectively irradiate one or more tips of the tip array and pattern the substrate, wherein the first pattern of radiation corresponds to a tip pattern for the first frame section; disposing the tip array in a patterning position in a second location of the substrate corresponding to a location of the substrate in which the second frame section in the set of frame sections is to be patterned; projecting a second pattern of radiation onto the tip array to selectively irradiate tips of the tip array and pattern the substrate, wherein the second pattern of radiation corresponds to a tip pattern for the second frame section; and repeating the disposing and projecting for each frame section in the set of frame sections to pattern the image.