Heat-Dissipating Material Layer for PoP Thermal Management
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Solution Overview
Problem
Semiconductor packages, particularly package-on-package (PoP) types, face challenges in efficiently dissipating heat generated from lower packages, which can lead to damage or performance degradation if not managed effectively.
Innovation Solution
Incorporating a heat-dissipating material layer with a thermal conductivity of approximately 0.5 W/m·K to 20 W/m·K, composed of a polymer matrix and insulating inorganic particles, in direct contact with the semiconductor device and exposed wiring, to enhance heat transfer and dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a traditional insulator layer is used between the semiconductor device and the second package substrate, then electrical insulation is provided, but heat dissipation is insufficient leading to heat accumulation in the lower package
Solution Approach 1:
The patent changes the thermal conductivity parameter of the insulator layer by incorporating inorganic particles (such as aluminum oxide, aluminum nitride, or boron nitride) into the polymer matrix. This creates a heat-dissipating material layer with enhanced thermal conductivity while maintaining electrical insulation properties, thereby improving heat dissipation efficiency and preventing heat accumulation that could damage the package
Solution Approach 2:
The patent uses composite materials by combining organic polymer materials with inorganic heat-dissipating particles to create a multi-functional material layer. This composite structure provides both electrical insulation from the polymer and enhanced heat dissipation from the inorganic particles, resolving the contradiction between insulation and heat dissipation requirements
2Temperature
If the thermal conductivity of the insulator layer is increased to improve heat dissipation, then heat transfer efficiency is improved, but the material selection and manufacturing complexity increases
Solution Approach 1:
The patent systematically varies the thermal conductivity parameter of the heat-dissipating material layer within a specific range (0.5 to 20 W/m·K) by adjusting the type and content of inorganic particles. This allows optimization of heat transfer efficiency while maintaining manufacturability through controlled material composition rather than selecting from overly complex material options
Solution Approach 2:
The patent applies local quality enhancement by concentrating heat-dissipating inorganic particles specifically in the insulator layer adjacent to the semiconductor device where heat generation occurs. This localized approach improves heat transfer efficiency at the critical interface without requiring complex material selections throughout the entire package structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively dissipates heat generated from semiconductor devices, preventing damage and maintaining performance by improving heat transfer efficiency compared to traditional methods.
Implementation Method 1
a heat-dissipating material layer between the first semiconductor device and the second package substrate. The heat-dissipating material layer has a thermal conductivity of approximately 0.5 W/m·K to approximately 20 W/m·K
Implementation Method 2
The heat-dissipating material layer includes a polymer matrix and insulating inorganic particles dispersed in the polymer matrix. A thermal conductivity of the insulating inorganic particles is 10 times a thermal conductivity of the lower insulator layer or greater
Data Source
AI summary
A semiconductor package includes: a first package substrate; a first semiconductor device mounted on the first package substrate; a second package substrate arranged on an upper part of the first semiconductor device; and a heat-dissipating material layer arranged between the first semiconductor device and the second package substrate and having a thermal conductivity of approximately 0.5 W/m·K to approximately 20 W/m·K, wherein the heat-dissipating material layer is in direct contact with an upper surface of the first semiconductor device and a conductor of the second package substrate.