Heat-Dissipating Metal Multilayer for Semiconductor Thermal Management

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Solution Overview

Problem

There is a need for semiconductor devices that combine improved heat dissipation properties with reduced overall size, while existing technologies face challenges in achieving this balance.

Innovation Solution

A semiconductor device configuration that includes a supporting substrate, a semiconductor chip, a resin member, and a heat-dissipating metal layer, where the heat-dissipating metal layer is in contact with both the supporting substrate and the resin member, and features a multilayer stack with different thermal conductivity and grain size characteristics to enhance heat dissipation, and conductor layers that replace traditional bonding wires for improved performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the overall size of the semiconductor device is reduced, then the device becomes more compact and suitable for miniaturization applications, but the heat dissipation capability deteriorates due to limited space for heat dissipation structures

Engineering Contradiction:
Improveoverall sizeVSAvoidheat dissipation capability
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The heat-dissipating metal layer is configured to extend in the thickness direction (vertical dimension) rather than only in the planar direction. By making the metal layer have a greater thickness and extending it to cover the second surface of the supporting substrate and the second surface of the resin member, the patent utilizes the third dimension to increase heat dissipation area without increasing the device footprint, thus resolving the contradiction between compact size and heat dissipation capability

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent employs a heat-dissipating metal layer with specific material properties (high thermal conductivity, greater thickness) that combines multiple functional characteristics. The metal layer serves both as a structural component covering the substrate and resin member, and as a thermal management solution, effectively integrating heat dissipation function into an existing structural element to improve thermal performance without adding separate heat dissipation components that would increase device size

Inventive Principle:
Principle #40Composite materials

2Temperature

If a heat-dissipating metal layer with greater thickness is added to improve heat dissipation, then thermal management is enhanced, but the device complexity and manufacturing process become more complicated

Engineering Contradiction:
Improveheat dissipationVSAvoidstructure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The heat-dissipating metal layer is designed to perform multiple functions simultaneously: it serves as a heat dissipation path, a protective covering layer, and a structural element of the device. By making the metal layer multi-functional, the patent avoids adding separate dedicated heat dissipation components, thereby enhancing thermal management without proportionally increasing device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent merges the heat dissipation function with the existing metal layer structure that already covers the supporting substrate and resin member. Instead of adding a separate heat dissipation component, the existing metal layer is enhanced with greater thickness and specific thermal properties, combining structural and thermal management functions into a single integrated element, thus improving heat dissipation while minimizing increases in device complexity

Inventive Principle:
Principle #5Merging (Combining)

3Loss of energy

If conductor layers are formed to replace bonding wires for improved heat dissipation and reduced parasitic inductance, then electrical performance is enhanced, but the manufacturing precision requirements increase

Engineering Contradiction:
Improveparasitic inductanceVSAvoidconductor layer formation precision
Core Design Contradiction:
Loss of energyVSManufacturing precision

Solution Approach 1:

The patent replaces the traditional mechanical bonding wire connection with deposited conductor layers formed through electroplating or similar deposition processes. This substitution eliminates the need for precise wire bonding operations and replaces them with a more controllable layer deposition process, reducing parasitic inductance while managing manufacturing precision requirements through established plating techniques

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables efficient heat dissipation and reduces the overall size of the semiconductor device, improving its thermal management and reliability while minimizing parasitic inductance and energy loss.

Implementation Method 1

The heat-dissipating metal layer is arranged in contact with the supporting substrate and the resin member to cover the second surface of the supporting substrate and the second surface of the resin member at least partially

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

metallic grains of the first metal layer have a smaller average grain size than metallic grains of the second metal layer

Methodology Applied
Scientific EffectThermal conductivity: Conduction (thermal)

Data Source

PatentUS11257733B2Semiconductor device including heat-dissipating metal multilayer having different thermal conductivity, and method for manufacturing same
Publication Date: 2022.02.22 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
  • US11257733B2 patent drawing
  • US11257733B2 patent drawing
  • US11257733B2 patent drawing

AI summary

A semiconductor device includes a supporting substrate, a semiconductor chip, a resin member, and a heat-dissipating metal layer. The supporting substrate has a first surface and a second surface located opposite from each other in a thickness direction defined for the supporting substrate. The semiconductor chip includes a plurality of electrodes. The semiconductor chip is bonded to the supporting substrate on one side thereof with the first surface. The resin member has a first surface and a second surface located opposite from each other in a thickness direction defined for the resin member. The resin member covers at least a side surface of the supporting substrate and a side surface of the semiconductor chip. The heat-dissipating metal layer is arranged in contact with the supporting substrate and the resin member to cover the second surface of the supporting substrate and the second surface of the resin member at least partially.