High-Conductivity Heat Dissipation Substrate for FinFET Thermal Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in heat dissipation due to the generation of heat from non-planar transistors and other features, leading to thermal damage and reduced reliability, as existing methods are not entirely satisfactory in managing heat dissipation effectively.
Innovation Solution
A semiconductor device is designed with a heat dissipation substrate having a thermal conductivity greater than 200 Wm−1K−1, made from dielectric materials like BeO, BN, or diamond, which is used in conjunction with a device layer containing transistors such as FinFETs or GAA transistors, allowing for efficient heat dissipation through both the substrate and an interconnection layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional substrates are used for semiconductor devices, then manufacturing cost and ease of fabrication are maintained, but heat dissipation capability is insufficient leading to thermal damage and reduced reliability
Solution Approach 1:
The patent changes the thermal conductivity parameter of the substrate by selecting materials with high thermal conductivity (greater than 200 Wm−1K−1), such as diamond, BeO, or BN, instead of conventional substrates. This parameter change enables effective heat dissipation while maintaining manufacturing feasibility, directly resolving the contradiction between reliability improvement and temperature management.
Solution Approach 2:
The patent employs composite material structures combining high thermal conductivity materials (diamond, BeO, BN) with semiconductor device layers. These composite substrates provide both the necessary thermal management capabilities and electrical insulation properties, solving the heat dissipation issue while maintaining device reliability.
2Temperature
If high thermal conductivity substrate materials are used, then heat dissipation capability is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent utilizes thin film layers (75-150 μm thickness) of high thermal conductivity materials that can be deposited using established CVD techniques. These thin films provide sufficient heat dissipation capability while minimizing material usage and manufacturing complexity, making the solution economically viable despite using advanced materials.
3Stability of the object's composition
If substrate thickness is increased to prevent substrate curl, then structural stability is improved, but heat dissipation efficiency decreases
Solution Approach 1:
The patent optimizes the substrate thickness parameter to a specific range (75-150 μm) that balances mechanical stability and thermal performance. This parameter optimization ensures the substrate is thin enough for effective heat dissipation while thick enough to maintain structural integrity and prevent curling, resolving the contradiction between stability and heat dissipation efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively dissipates heat generated by the device layer, improving the reliability and efficiency of heat dissipation, preventing thermal damage and reducing the risk of substrate curl, while enhancing the overall performance of semiconductor devices.
Implementation Method 1
The thermal conductivity of the heat dissipation substrate is greater than 200 Wm−1K−1... effectively dissipates heat generated by the device layer
Data Source
AI summary
A semiconductor device and method for forming same. According to an embodiment. The method provides a base substrate, forms a heat dissipation substrate on the base substrate, wherein a thermal conductivity of the heat dissipation substrate is between 200 Wm−1K−1 and 1200 Wm−1K−1. This method further forms a device layer on the heat dissipation substrate, wherein the device layer comprises a transistor. The method further removes the base substrate.