Heat Radiation Plate Narrowing for Semiconductor Bond Reliability
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Solution Overview
Problem
In semiconductor devices where a semiconductor element and a metal electrode are bonded to a heat radiation plate via an insulating substrate, heat generated by the semiconductor element can easily transfer to the bonding portion between the metal electrode and the insulating substrate, leading to bonding deterioration and reduced reliability.
Innovation Solution
A semiconductor device design featuring a heat radiation plate with a narrowed portion between the semiconductor element and metal electrode bonding regions, which reduces heat transfer to the bonding portion, improving reliability by using a heat radiation plate with a narrowed width in the thickness direction, potentially filled with a substance of lower thermal conductivity than the plate material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat radiation plate with uniform width is used to efficiently dissipate heat from semiconductor element, then heat dissipation performance is improved, but heat transfer to bonding portion increases causing deterioration and reduced reliability
Solution Approach 1:
The heat radiation plate features a narrowed portion at specific locations where it contacts the insulating substrate, creating local variations in width. This local quality change reduces heat transfer to bonding portions while maintaining overall heat dissipation functionality, as the narrowed sections act as thermal barriers at critical interfaces.
Solution Approach 2:
The heat radiation plate is segmented into regions of different widths, with narrowed portions positioned at specific locations corresponding to bonding areas. This segmentation allows different parts of the plate to serve different functions: wider regions for heat dissipation and narrower regions for reducing heat transfer to sensitive bonding portions.
2Reliability
If narrow portion is added to heat radiation plate to suppress heat transfer, then bonding portion reliability is improved, but device complexity increases
Solution Approach 1:
The width parameter of the heat radiation plate is changed locally to create narrowed portions. This parameter modification provides a simple geometric solution to reduce heat transfer without introducing additional components or complex mechanisms, thereby minimizing increases in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The narrowed portion on the heat radiation plate effectively suppresses heat transfer to the bonding portion between the metal electrode and insulating substrate, enhancing the reliability of the semiconductor device by minimizing thermal stress and peeling risks.
Implementation Method 1
heat generated by the semiconductor element is transferred to a bonding portion between the metal electrode and the insulating substrate through the heat radiation plate
Data Source
AI summary
To provide a semiconductor device with improved reliability by suppressing a degree at which heat generated by a semiconductor element is transferred through a heat radiation plate to a bonding portion between a metal electrode and an insulating substrate. The semiconductor device includes a heat radiation plate, at least one insulating substrate, a semiconductor element, and a metal electrode. The at least one insulating substrate is bonded on one main surface of the heat radiation plate, the semiconductor element is bonded on the one main surface via any of the at least one insulating substrate, the metal electrode is bonded on the one main surface via any of the at least one insulating substrate. The heat radiation plate has, in a region between a region where the semiconductor element is bonded and a region where the metal electrode is bonded, a narrowed portion.