Heat Radiation Component Warpage Control via Layered CTE Gradient
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Solution Overview
Problem
The existing heat radiation components for semiconductor devices face issues with warpage due to thermal expansion differences between the semiconductor device and the board, leading to separation of the thermal interface material and reduced heat radiation performance.
Innovation Solution
A heat radiation component is designed with a first layer and a second layer, where the second layer has a lower coefficient of thermal expansion than the first layer, allowing it to warp in the same direction as the semiconductor device and board, thus preventing separation of the thermal interface material and maintaining heat radiation performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heat radiation component is attached on a semiconductor device using a thermal interface material, then heat radiation performance is improved, but warpage occurs due to coefficient of thermal expansion difference between the semiconductor device and the board
Solution Approach 1:
The heat radiation component is divided into a first layer and a second layer with different coefficients of thermal expansion. The first layer contacts the semiconductor device while the second layer contacts the board, allowing each layer to accommodate thermal expansion differently and reduce overall warpage.
Solution Approach 2:
The heat radiation component uses a composite structure with two layers of different materials. The first layer has a coefficient of thermal expansion matching the semiconductor device, while the second layer has a coefficient matching the board, creating a gradient that compensates for warpage.
2Stability of the object's composition
If the heat radiation component is fixed rigidly to the board, then structural stability is improved, but the thermal interface material separates under thermal cycling
Solution Approach 1:
The heat radiation component is designed to be flexible rather than rigid, allowing it to dynamically adapt to thermal expansion and contraction during cycling. This flexibility prevents stress concentration that would cause thermal interface material separation while maintaining structural stability.
Solution Approach 2:
The component uses layers with different coefficients of thermal expansion to create a gradient structure that changes its physical parameters (flexibility, expansion rate) in response to temperature changes, allowing it to accommodate thermal cycling without separation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures that the thermal interface material follows the warpage of the semiconductor device, preventing separation and maintaining heat radiation performance even under repeated heating and cooling cycles, while also reducing the weight and manufacturing cost of the semiconductor package.
Implementation Method 1
a coefficient of thermal expansion of the second layer is lower than a coefficient of thermal expansion of the first layer
Data Source
AI summary
A heat radiation component configured to be provided through a thermal interface material on a semiconductor device mounted on a board includes a first layer to be positioned on a first side and a second layer stacked on the first layer to be positioned on a second side farther from the semiconductor device than the first side. The coefficient of thermal expansion of the second layer is lower than the coefficient of thermal expansion of the first layer.