Heat Spreader Layer in Semiconductor Packaging for Hot Spot Cooling
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Solution Overview
Problem
New packaging technologies for semiconductor dies face manufacturing challenges as they strive to improve density and functionality while managing heat dissipation effectively.
Innovation Solution
A package structure with a heat spreader layer is introduced, which is formed over semiconductor dies to dissipate heat laterally, reducing the temperature at hot spots and improving the performance of the package structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If new packaging technologies are used to improve density and functionality, then the number of interconnected devices per chip area increases, but heat dissipation becomes more difficult and manufacturing challenges arise
Solution Approach 1:
The package structure is divided into multiple functional layers including a heat spreader layer, encapsulant layer, and interconnect layers. The heat spreader layer is specifically segmented to include heat dissipation features that are distributed throughout the package structure, allowing heat to be managed in different zones rather than concentrated in one area.
Solution Approach 2:
A heat spreader layer is introduced as an intermediary component between the semiconductor devices and the package substrate. This heat spreader acts as a thermal mediator that conducts heat away from the high-density interconnect regions and distributes it across a larger area, facilitating effective heat dissipation without compromising the high-density packaging.
2Productivity
If feature sizes are decreased to improve functional density, then the number of interconnected devices increases, but manufacturing precision requirements increase
Solution Approach 1:
The package structure incorporates pre-formed heat spreader layers and thermal management features that are prepared before the final assembly of high-density interconnects. This preliminary preparation of thermal pathways allows for better control of heat flow in high-density configurations without requiring post-assembly adjustments that would demand even higher precision.
3Volume of moving object
If package size is reduced to take up less space, then space efficiency improves, but heat dissipation capacity decreases
Solution Approach 1:
The heat spreader layer extends laterally beyond the immediate device area, utilizing the horizontal plane for heat distribution rather than relying solely on vertical heat paths. This dimensional approach allows heat to be spread across a larger surface area within the constrained package volume, improving heat dissipation capacity without increasing the overall package footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The heat spreader layer effectively reduces the temperature of the package structure by 8-10°C at semiconductor dies and 3°C at package components, enhancing the overall performance of the semiconductor device.
Implementation Method 1
a heat spreader layer, which is formed over the semiconductor dies to dissipate heat laterally
Data Source
AI summary
A package structure and method for manufacturing the same are provided. The package structure includes a first redistribution structure and a first package component and a second package component attached to a first side of the first redistribution structure and spaced apart from each other. The package structure further includes a first semiconductor die attached to a second side of the first redistribution structure and an encapsulant. The package structure further includes a heat spreader layer formed over the first semiconductor die, and a thermal conductivity of the heat spreader layer is greater than a thermal conductivity of the encapsulant. The package structure further includes a conductive feature formed through the heat spreader layer and a second redistribution structure formed over the heat spreader layer. In addition, the second retribution structure is electrically connected to the first semiconductor die through the conductive feature.