Heat Spreader Layer for 3D IC Thermal Management
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Solution Overview
Problem
In 3D stacked integrated circuits, the hydrogen implantation method used for layer formation can damage the crystal lattice structure, requiring high-temperature thermal treatment to recover, which can deform underlying devices and interconnect layers, and heat removal remains a significant challenge due to high thermal resistance.
Innovation Solution
The integration of a heat spreader or shield layer with high thermal conductivity materials, such as copper or carbon nanotubes, between sensitive metal interconnect layers and the annealing region, and the use of optical annealing techniques to repair lattice damage at lower temperatures, along with enhanced power and ground distribution networks to facilitate heat transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-temperature thermal treatment is used to recover lattice damage, then crystal lattice structure is restored, but underlying devices and interconnect layers are deformed
Solution Approach 1:
A heat spreader layer with high thermal conductivity is introduced as an intermediary between the semiconductor layer and the underlying metal interconnect layers. This heat spreader absorbs and distributes the thermal energy during annealing, preventing direct thermal damage to the interconnect layers while still allowing sufficient heat to reach the semiconductor layer for lattice recovery
Solution Approach 2:
The patent changes the thermal parameters by using a heat spreader material with significantly higher thermal conductivity than the surrounding structures. This parameter change allows for more uniform heat distribution and controlled thermal profiles during annealing, enabling lattice recovery at lower peak temperatures or with more uniform heating that doesn't deform underlying structures
2Manufacturing precision
If conventional thermal annealing is used to repair lattice damage, then crystal structure is recovered, but heat removal becomes difficult due to high thermal resistance
Solution Approach 1:
The heat spreader layer serves as a thermal intermediary that facilitates heat removal. Its high thermal conductivity creates efficient thermal pathways from the semiconductor layer to the substrate and packaging structures, enabling effective heat dissipation after annealing or during operation
Solution Approach 2:
The patent replaces conventional thermal management approaches with a materials-based solution. Instead of relying on geometric heat sinks or active cooling systems, the high thermal conductivity material inherently provides thermal management through its material properties, passively conducting heat away from critical regions
3Manufacturing precision
If hydrogen implantation is used for layer formation, then single crystalline semiconductor layer is formed, but crystal lattice structure is damaged
Solution Approach 1:
The heat spreader layer acts as a protective intermediary during the annealing process. It enables the thermal treatment needed to repair hydrogen implantation damage while distributing the thermal load uniformly, preventing localized overheating that could cause additional lattice defects or deform underlying structures
Solution Approach 2:
The introduction of the heat spreader enables optimization of annealing parameters. The high thermal conductivity material allows for shorter annealing times at lower temperatures, or more uniform heating profiles, which effectively repairs hydrogen damage while minimizing thermal budget and preventing secondary damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables defect-free single crystalline semiconductor layer formation at lower temperatures, reduces thermal resistance, and improves heat removal efficiency in 3D ICs, protecting underlying metal interconnects and enhancing the structural integrity and cooling capabilities of the devices.
Implementation Method 1
The integration of a heat spreader or shield layer with high thermal conductivity materials, such as copper or carbon nanotubes, between sensitive metal interconnect layers and the annealing region
Implementation Method 2
the use of optical annealing techniques to repair lattice damage at lower temperatures
Implementation Method 3
optical annealing techniques to repair lattice damage at lower temperatures
Implementation Method 4
high thermal conductivity materials, such as copper or carbon nanotubes
Data Source
AI summary
An Integrated Circuit device, including: a base wafer including single crystal, the base wafer including a plurality of first transistors; at least one metal layer providing interconnection between the plurality of first transistors; a first wire structure constructed to provide power to a portion of the first transistors; a second layer of less than 2 micron thickness, the second layer including a plurality of second single crystal transistors, the second layer overlying the at least one metal layer; and a second wire structure constructed to provide power to a portion of the second transistors, where the second wire structure is isolated from the first wire structure to provide a different power voltage to the portion of the second transistors.