Heat Spreader Layer in Semiconductor Packages for Hot Spot Control
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Solution Overview
Problem
New packaging technologies for semiconductor dies face manufacturing challenges, particularly in managing heat dissipation and structural integrity in smaller, higher-density package structures.
Innovation Solution
A package structure with a carbon-containing heat spreader layer is formed over semiconductor dies to dissipate heat laterally, reducing temperature and improving performance, while maintaining electrical connections through conductive features and redistribution structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to increase functional density, then production efficiency and cost are improved, but heat dissipation becomes more difficult and temperature control deteriorates
Solution Approach 1:
The patent introduces a heat spreader layer positioned between the semiconductor die and the package substrate, creating a new dimensional pathway for heat dissipation. This intermediate thermal management layer conducts heat laterally across the package structure, adding a horizontal heat dissipation dimension to complement the vertical heat flow path, thereby effectively managing thermal loads in high-density packages
2Area of stationary object
If package structures are made smaller to reduce space occupation, then space efficiency is improved, but structural integrity and heat management become more challenging
Solution Approach 1:
The patent employs a composite package structure consisting of multiple materials with complementary properties: a heat spreader layer (metal or metal alloy) integrated with organic or ceramic package substrates, and semiconductor dies with specific thermal and electrical characteristics. This multi-material composite approach enables simultaneous optimization of mechanical strength, thermal conductivity, and electrical performance in compact package footprints
3Productivity
If functional density is increased by reducing feature sizes, then device integration is improved, but heat generation per unit area increases and thermal management becomes more difficult
Solution Approach 1:
The heat spreader layer functions as a thermal intermediary between the high-density semiconductor die and the package substrate. This intermediate layer has high thermal conductivity to efficiently collect and distribute heat laterally, preventing localized hot spots that would otherwise occur directly beneath the densely packed semiconductor features, thereby enabling effective thermal management at high functional densities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The heat spreader layer effectively reduces temperature at hot spots by up to 18°C, enhancing the package structure's performance and efficiency.
Implementation Method 1
A package structure with a carbon-containing heat spreader layer is formed over semiconductor dies to dissipate heat laterally
Data Source
AI summary
A package structure and method for manufacturing the same are provided. The package structure includes a first redistribution structure and a first package component and a second package component attached to a first side of the first redistribution structure and spaced apart from each other. The package structure further includes a first semiconductor die attached to a second side of the first redistribution structure and an encapsulant. The package structure further includes a heat spreader layer formed over the first semiconductor die, and a thermal conductivity of the heat spreader layer is greater than a thermal conductivity of the encapsulant. The package structure further includes a conductive feature formed through the heat spreader layer and a second redistribution structure formed over the heat spreader layer. In addition, the second redistribution structure is electrically connected to the first semiconductor die through the conductive feature.