Heat Treatment Device Upward Gas Flow Sublimate Control
Solution Overview
Problem
Existing heat treatment devices face challenges in suppressing the scattering of metal-containing sublimates during the heat treatment of substrates with metal-containing resist films, which can lead to adhesion and contamination within the device, affecting the quality of the resist pattern and device performance.
Innovation Solution
A heat treatment device and method that utilize a heating plate, a chamber, a gas ejecting unit, a gas supply unit, and an exhaust unit to create an upward gas flow around the substrate, blocking the movement of sublimates and preventing their scattering by evacuating gases through exhaust holes formed above the processing space, thereby controlling the gas flow path area and enhancing the uniformity of the resist pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If heat treatment is performed on substrate with metal-containing resist film, then resist pattern fineness is improved, but metal-containing sublimates scatter and adhere to device components
Solution Approach 1:
A gas flow is introduced as an intermediary medium between the heating plate and the chamber walls. This gas flow acts as a protective barrier that captures metal-containing sublimates rising from the substrate and directs them toward the exhaust unit, preventing adhesion to device components while maintaining the heat treatment process that achieves fine resist patterns
Solution Approach 2:
The patent employs pneumatic control by supplying gas (such as nitrogen or air) into the chamber during heat treatment. This gas flow creates a controlled atmosphere that prevents sublimate scattering through fluid dynamics, directing volatile metal-containing substances toward designated exhaust paths rather than allowing random deposition on device surfaces
2Object-generated harmful factors
If gas flow is increased to suppress sublimate scattering, then adhesion is reduced, but heat treatment uniformity may be affected
Solution Approach 1:
The patent optimizes gas flow parameters (flow rate, pressure, temperature) to achieve the minimum effective flow needed to suppress sublimate scattering. By carefully controlling these parameters, the system maintains sufficient gas velocity to capture metal-containing sublimates while avoiding excessive flow that would disrupt thermal uniformity and affect heat treatment quality
Solution Approach 2:
The gas flow is strategically directed to create localized protection zones around the substrate where sublimate generation occurs. The gas flow intensity is concentrated in regions where sublimation is most active, providing targeted suppression of harmful deposits while maintaining gentle conditions in other areas to preserve heat treatment uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the scattering of metal-containing sublimates, minimizing adhesion to device components and improving the quality and uniformity of the resist pattern by forming a controlled upward gas flow that directs sublimates away from the substrate and device periphery.
Implementation Method 1
a heating plate that supports and heats the substrate
Implementation Method 2
a gas supply unit that supplies a gas into the chamber from below a surface of the substrate
Implementation Method 3
an exhaust unit that evacuates inside of the chamber through exhaust holes that are formed above the processing space
Implementation Method 4
forming a controlled upward gas flow that directs sublimates away from the substrate and device periphery
Data Source
AI summary
A heat treatment device includes: a heating plate that supports and heats a substrate on which a resist film is formed, and the resist film is subjected to an exposure process; a chamber that covers a processing space above the heating plate; a gas ejecting unit that ejects a processing gas from above toward the substrate on the heating plate within the chamber; a gas supply unit that supplies a gas into the chamber from below a surface of the substrate, within the chamber; and an exhaust unit that evacuates inside of the chamber through exhaust holes that are formed above the processing space and open downwards.