Heated Gas Box Flow Path for Stable HF Plasma Gas Control
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Solution Overview
Problem
Existing plasma processing apparatuses fail to accurately control the flow rate of gases like hydrogen fluoride (HF) due to molecular clustering, which affects the wafer processing accuracy.
Innovation Solution
A plasma processing apparatus with an integrated gas box that includes a flow path with a heater, a bypass path, and a flow controller to detect and adjust the gas inflow, thereby inhibiting clustering and ensuring stable gas supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If gas such as hydrogen fluoride is supplied at normal temperature, then the gas can be supplied into the chamber, but molecular clustering occurs inside the supply passage causing inaccurate flow rate control
Solution Approach 1:
The patent applies parameter changes by heating the supply passage to a temperature of 40°C or higher. This temperature parameter change prevents molecular clustering of hydrogen fluoride gas while maintaining its gaseous state, thereby ensuring accurate flow rate control that matches the MFC output display.
2Measurement precision
If the gas is heated to prevent clustering, then flow rate control accuracy improves, but energy consumption increases
Solution Approach 1:
The patent applies partial action by heating only the supply passage to a moderate temperature (40°C or higher) rather than excessively high temperatures. This partial heating is sufficient to prevent molecular clustering and ensure accurate flow control while minimizing unnecessary energy consumption.
3Loss of energy
If no heating is applied to the supply passage, then energy consumption is low, but the apparent flow rate does not match the actual gas flow due to clustering
Solution Approach 1:
The patent changes the temperature parameter of the supply passage to 40°C or higher, which prevents molecular clustering of hydrogen fluoride gas. This ensures that the apparent flow rate from the MFC accurately reflects the actual gas flow, thereby maintaining manufacturing precision for wafer processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively inhibits gas clustering and stabilizes the gas supply, leading to accurate flow control and improved wafer processing outcomes.
Implementation Method 1
gas such as hydrogen fluoride is clustered inside a supply passage at a normal temperature or less
Implementation Method 2
a heater configured to heat the flow path
Data Source
AI summary
A plasma processing apparatus that can inhibit clustering of gas and supply the gas stably, including an integrated gas box configured to adjust the flow rate of gas, and a discharge portion, and the integrated gas box includes gas blocks including a flow path through which the gas flows, a heater configured to heat the flow path, a bypass path provided in the flow path, and a flow controller configured to detect the inflow amount of the gas and output the gas from the flow path to the discharge portion. The heater is configured to perform heating to a predetermined temperature based on the type of the gas. The predetermined temperature is, for example, 65° C. or more. The bypass path includes a flow path causing a change in the pressure of the gas flowing through the flow path.