Epitaxial Film Formation Apparatus with Heated Gas Mist Stabilization
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Solution Overview
Problem
Existing film formation apparatuses face challenges in maintaining substrate temperature stability and solution concentration consistency due to mist evaporation, which affects the quality of the epitaxially grown films.
Innovation Solution
A film formation apparatus that supplies heated gas with a higher temperature than the mist, containing the same material as the solvent, to heat and stabilize the mist before deposition on the substrate, reducing solvent evaporation and maintaining solution concentration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If mist is supplied to the heated substrate surface, then film growth is enabled, but substrate temperature stability deteriorates due to heat removal from the substrate
Solution Approach 1:
The mist is preheated before being supplied to the substrate surface. The heating unit heats the mist in advance, raising its temperature closer to the substrate temperature. This preliminary heating action prevents excessive heat removal from the substrate when the mist contacts it, thereby maintaining substrate temperature stability while still enabling film growth.
2Temperature
If heated mist is supplied to the substrate surface, then substrate temperature stability is improved, but solvent evaporation increases causing solution concentration to change
Solution Approach 1:
The system controls and optimizes the heating parameters to raise the mist temperature to a specific range that is sufficient to prevent substrate temperature fluctuations but not high enough to cause excessive solvent evaporation. By carefully adjusting the heating temperature parameter, both substrate temperature stability and solution concentration stability are maintained.
3Temperature
If mist temperature is increased to reduce heat removal from substrate, then substrate temperature stability improves, but solvent evaporation from mist increases
Solution Approach 1:
The heating unit is controlled to maintain the mist at an optimal temperature parameter that balances two competing requirements: it is warm enough to minimize heat removal from the substrate, yet not so hot as to cause excessive solvent evaporation. This parameter optimization resolves the contradiction between substrate temperature stability and solvent retention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures stable substrate temperature and consistent solution concentration, enabling the growth of high-quality epitaxial films by minimizing heat removal from the substrate and suppressing solvent evaporation.
Implementation Method 1
the mist is heated by the heated gas
Implementation Method 2
in the heated gas, the gas constituted of the same material as the material of the solvent has a high partial pressure. Therefore, even if the mist is heated by the heated gas, the solvent contained in the mist is less prone to evaporate
Data Source
AI summary
A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.