Heated Metal Lid Assembly for Selective PECVD at 700°C
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional process chamber lids face challenges in heating to high temperatures without creating device defects, especially when dealing with corrosive chemistry and high particle counts during remote plasma enhanced chemical vapor deposition (PECVD) of titanium silicide (TiSi).
Innovation Solution
The implementation of a gas distribution assembly with a metal heater isolated from the process cavity, using two nickel showerheads with a dual plasma capability, and incorporating ceramic isolators to prevent thermal conduction and electrical isolation for plasma processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the process chamber lid is heated to very high temperatures to prevent TiClX byproduct condensation, then particle counts are reduced, but conventional ceramic heater designs suffer from reliability issues and contribute to defects in deposited films
Solution Approach 1:
The heating function is extracted from the ceramic heater and transferred to a metal heater (such as aluminum or aluminum alloy) that is isolated from the process cavity. This separation allows the metal heater to provide reliable heating without being exposed to corrosive process chemistry, thereby eliminating the reliability issues and defect formation associated with conventional ceramic heaters while maintaining the high temperature capability needed to prevent particle condensation
Solution Approach 2:
A metal heater isolated from the process cavity acts as an intermediary heating element. This intermediary component provides thermal energy to the process chamber lid without direct exposure to the corrosive TiClX chemistry, thereby preventing both particle condensation (by maintaining high temperatures) and heater degradation (by isolating the heater from harmful chemicals)
2Temperature
If conventional ceramic heater designs are used for heating, then heating capability is provided, but the chemistry involved in the deposition process is highly corrosive so the heating element must be isolated from the process gases
Solution Approach 1:
The heating function is extracted from the process cavity environment and placed in an isolated metal heater positioned outside the direct path of process gases. This extraction allows the heating element to operate at required temperatures without being subjected to corrosive chemistry, solving both the heating capability requirement and the corrosion resistance requirement simultaneously
Solution Approach 2:
The metal heater is isolated from the corrosive process gases by positioning it outside the process cavity or protecting it with an inert barrier. This creates an inert environment for the heating element, allowing it to maintain high temperatures without exposure to harmful chemicals, thereby achieving both effective heating and corrosion protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for reliable heating of the process chamber lid to 700°C, enhancing the selectivity of Ti growth while preventing device defects and maintaining the integrity of the deposited films.
Implementation Method 1
the process chamber lid must be heated to very high temperatures
Implementation Method 2
incorporating ceramic isolators to prevent thermal conduction
Implementation Method 3
dual plasma capability, and incorporating ceramic isolators to prevent thermal conduction and electrical isolation for plasma processing
Data Source
AI summary
Gas distribution assemblies for a semiconductor manufacturing processing chamber comprising a first showerhead with a first flange and a second showerhead with a second flange. A first two-piece RF isolator comprises a first inner RF isolator spaced from a first outer RF isolator. The first inner RF isolator spaced from the first flange of the first showerhead to create a first flow path. A second two-piece RF isolator comprises a second inner RF isolator spaced from a second outer RF isolator. The second RF isolator spaced from the second flange of the second showerhead to create a second flow path. Processing chambers incorporating the gas distribution assemblies, and processing methods using the gas distribution assemblies are also described.