Heated Purge Vent Fluid for Semiconductor Load Lock Moisture Control
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Solution Overview
Problem
Semiconductor processing systems face challenges in controlling moisture, which can lead to corrosion and affect the properties of material layers deposited, due to infiltration of water vapor and residual precursors, despite existing countermeasures like elevated internal pressure and purge flows.
Innovation Solution
A semiconductor processing system with a heated purge/vent fluid arrangement that includes a heater element and a controller to transfer substrates, heat a purge/vent fluid, and remove moisture from the load lock, using a hygrometer to adjust the mass flow based on dew point measurements, ensuring effective moisture control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If internal elevated pressure is maintained to prevent moisture infiltration, then moisture infiltration is reduced, but energy consumption increases and system complexity increases
Solution Approach 1:
The system performs preliminary heating of the load lock chamber and substrate before processing to prevent moisture condensation. By maintaining elevated temperature in advance, the system avoids moisture infiltration issues without requiring continuous high pressure, thereby reducing energy consumption while still protecting against harmful moisture effects.
Solution Approach 2:
The system dynamically adjusts temperature and pressure parameters based on process requirements. Instead of maintaining constantly elevated pressure, the system uses controlled pressure changes combined with temperature control to achieve moisture prevention, reducing overall energy consumption while maintaining effectiveness.
2Object-affected harmful factors
If purge flows are used to displace moisture, then moisture removal is improved, but processing time increases and productivity decreases
Solution Approach 1:
The system performs preliminary heating of the load lock chamber and substrate to evaporate moisture before the actual processing begins. This preliminary moisture removal action eliminates the need for extended purge flows during processing, thereby maintaining high processing throughput while still achieving effective moisture removal.
Solution Approach 2:
The system uses rapid thermal processing to quickly evaporate and remove moisture in a short time period, skipping the need for prolonged purge flows. This rushing through the moisture removal process via thermal means maintains high productivity while still achieving the desired moisture removal effect.
3Object-affected harmful factors
If heaters are used to mobilize liquids, then moisture control is improved, but energy consumption increases
Solution Approach 1:
The system applies heating locally to specific areas where moisture is most problematic, such as the substrate surface and critical chamber regions, rather than heating the entire system uniformly. This localized heating approach improves moisture control effectiveness while reducing overall energy consumption compared to full-system heating.
Solution Approach 2:
The system uses controlled temperature parameter changes to mobilize and remove moisture efficiently. By adjusting temperature profiles and rates of change, the system achieves effective moisture control with minimized energy input, avoiding excessive heating while still mobilizing liquids as needed.
4Productivity
If moisture is not controlled, then processing speed is maintained, but material layer properties are affected and corrosion occurs
Solution Approach 1:
The system performs preliminary heating and moisture removal from the substrate and chamber before material layer deposition begins. This preliminary action ensures that no moisture is present to affect material layer properties or cause corrosion, while the actual deposition process maintains high speed without interruption for moisture control.
Solution Approach 2:
The system uses controlled thermal processing to convert the potential harm of moisture into a benefit by deliberately heating to evaporate moisture and then using the same thermal field to control the deposition process. This approach ensures material layer quality while maintaining processing speed, turning what would be a harmful factor into a useful process parameter.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively removes moisture from the load lock, preventing corrosion and ensuring consistent material layer properties by directly heating and evaporating surface and substrate moisture, and throttling fluid flow to optimize processing efficiency.
Implementation Method 1
heat a purge/vent fluid using the heater element
Implementation Method 2
directly heating and evaporating surface and substrate moisture
Implementation Method 3
flow the heated purge/vent fluid into the load lock using the purge/vent fluid inlet conduit
Implementation Method 4
using a hygrometer to adjust the mass flow based on dew point measurements
Data Source
AI summary
A semiconductor processing system includes a front-end module connected to a load lock, a process module coupled to the front-end module by the load lock, a purge/vent fluid inlet conduit connected to the load lock, a heater element coupled to the load lock by the purge/vent fluid inlet conduit, and a controller. The controller is operably connected to the heater element and responsive to instructions recorded on a memory to transfer a substrate carrying substrate moisture from the front-end module into the load lock, heat a purge/vent fluid using the heater element, flow the heated purge/vent fluid into the load lock using the purge/vent fluid inlet conduit, remove the moisture from the load lock using the heated purge/vent fluid, and transfer the substrate from the load lock to the process module for processing using the process module. Moisture control methods and heated purge/vent fluid arrangements are also described.


