Heated Surface for ALD CVD Uniformity
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Solution Overview
Problem
Deposition methods such as ALD and CVD face challenges in achieving uniformity across semiconductor wafer substrates, particularly with edge build-up issues and precursor depletion, leading to non-uniform coating thickness and complications in further processing.
Innovation Solution
Incorporating a heated surface within the deposition chamber to induce side reactions with precursors before they reach the semiconductor substrates, ensuring that problematic products do not reach the substrates, thereby maintaining uniform deposition and reducing CVD-type issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If precursors are flowed directly to semiconductor substrates in traditional deposition chambers, then deposition process is simple, but edge build-up and non-uniform coating thickness occur
Solution Approach 1:
A heated surface (inlet port or plate) is introduced as an intermediary element between the precursor source and the semiconductor substrates. This intermediary surface promotes side reactions that consume problematic precursor components before they reach the substrates, thereby preventing edge build-up and improving coating uniformity without requiring fundamental changes to the deposition chamber architecture
2Productivity
If precursors interact with heated substrates, then deposition occurs, but side reactions generate problematic products that reach substrates causing non-uniformity
Solution Approach 1:
Side reactions are induced preliminarily at the heated inlet port or plate surface before precursors reach the semiconductor substrates. This preliminary action consumes problematic precursor components through controlled side reactions, ensuring that only beneficial precursor species reach the substrates for uniform deposition, thus maintaining high productivity while improving coating uniformity
3Manufacturing precision
If traditional ALD purging is used, then monolayer formation is controlled, but precursor depletion occurs leading to non-uniform deposition
Solution Approach 1:
Problematic precursor components are selectively extracted or removed through side reactions at the heated inlet port or plate surface. This extraction process removes harmful species that would otherwise deplete precursors during traditional purging cycles, maintaining adequate precursor availability for uniform deposition while preserving monolayer control characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces non-uniformity in deposition, alleviates edge build-up, and extends the lifespan of deposition apparatus components by preventing precursor depletion, enhancing the overall efficiency and uniformity of the deposition process.
Implementation Method 1
The bulk flow of one or more precursors interacts with the heated surface for a sufficient time so that undesired side reactions occur prior to the bulk flow migrating beyond the heated surface toward the one or more semiconductor wafer substrates
Implementation Method 2
ALD is generally considered to include processes in which precursors alternately react at an exposed surface in a self-limiting manner
Data Source
AI summary
The invention includes deposition methods and apparatuses which can be utilized during atomic layer deposition or chemical vapor deposition. A heated surface is provided between a stack of semiconductor substrates and a precursor inlet, and configured so that problematic side reactions occur proximate the heated surface rather than proximate the semiconductor substrates. The precursor inlet can be one of a plurality of precursor inlets, and the heated surface can be one of a plurality of heated surfaces.